02918nam0 22005653i 450 VAN024877020230529021358.303N978303052348020220729d2020 |0itac50 baengCH|||| |||||Classification and Data AnalysisTheory and Applications Krzysztof Jajuga, Jacek Batóg, Marek Walesiak editorsChamSpringer2020xiii, 335 p.ill.24 cm001VAN01031702001 Studies in classification, data analysis, and knowledge organization210 Berlin [etc.]SpringerVAN0248771Classification and Data Analysis220901768UxxComputing methodologies and applications [MSC 2020]VANC019673MF62H25Factor analysis and principal components; correspondence analysis [MSC 2020]VANC025575MF62HxxMultivariate analysis [MSC 2020]VANC026440MF62P20Applications of statistics to economics [MSC 2020]VANC026444MF62PxxApplications of statistics [MSC 2020]VANC027777MF62H30Classification and discrimination; cluster analysis (statistical aspects) [MSC 2020]VANC028931MF62P25Applications of statistics to social sciences [MSC 2020]VANC031206MF62P12Applications of statistics to environmental and related topics [MSC 2020]VANC033424MF62H86Multivariate analysis and fuzziness [MSC 2020]VANC037099MFApplications of statistics in economics and financeKW:KApplications of statistics in social problemsKW:KClassification and regression treesKW:KCluster analysisKW:KComposite measuresKW:KComputer applications of statistical methodsKW:KData MiningKW:KData analysis tools in micro and macroeconomic problemsKW:KMultivariate data analysisKW:KSymbolic data analysisKW:KVisualization and scaling methodsKW:KCHChamVANL001889BatógJacekVANV203576JajugaKrzysztofVANV203575WalesiakMarekVANV203577Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-3-030-52348-0E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0248770BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 4587 08eMF4587 20220729 Classification and Data Analysis2209017UNICAMPANIA04276nam 2200865z- 450 991055734330332120220111(CKB)5400000000042458(oapen)https://directory.doabooks.org/handle/20.500.12854/77105(oapen)doab77105(EXLCZ)99540000000004245820202201d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierMicro- and Nanotechnology of Wide Bandgap SemiconductorsBasel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (114 p.)3-0365-1522-4 3-0365-1521-6 Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well 'green' power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective - Area Metalorganic Vapour - Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.Technology: general issuesbicsscAlGaNAlGaN/GaNAlGaN/GaN heterostructuresAlNammonothermal methodconductance-frequencycrystal growthdiffusiondiffusion coefficientsedge effectseffective diffusion lengthgallium nitridegallium nitride nanowiresGaNGaN HEMTgrowth polarityHVPEinterface state densityion implantationKelvin probe force microscopylaser diodeLEDsLTEmicrowave power amplifierMISHEMTmolecular beam epitaxyMOVPEn/ananowiresnitridespolarityselective area growthselective epitaxyself-heating effectthermal equivalent circuitthermal impedancethermal time constantthermodynamicstunnel junctionultra-high-pressure annealingTechnology: general issuesPiotrowska Anna Bedt1290177Kamińska ElianaedtWojtasiak WojciechedtPiotrowska Anna BothKamińska ElianaothWojtasiak WojciechothBOOK9910557343303321Micro- and Nanotechnology of Wide Bandgap Semiconductors3021392UNINA01045nam0-22003491i-450 99000546256040332120260115130110.0000546256FED01000546256(Aleph)000546256FED0119990604d1981----km-y0itay50------baitaITy-------001yy<<Il >>carnevale del 1764 a Napoliprotesta e integrazione in uno spazio urbanoLaura BarlettaNapoliSocieta Editrice Napoletana1981175 p.22 cmCarnevaleNapoli1764945.73107423itaBarletta,Laura211397ITUNINAREICATUNIMARCBK990005462560403321945.7307 BARL 01ST.MED.MOD. 10250FLFBCSEZ.NA B 220814692FARBCLEPORE 643LEPORE 643fARBCMAR / BAR 710092bfsBFSFLFBCFARBCCarnevale del 1764 a Napoli588424UNINA