00958nam0-22002891i-450-99000319087040332120041015113308.0000319087FED01000319087(Aleph)000319087FED0100031908720030910d1989----km-y0itay50------baengIT<<The >>Separation of Finance and Industrya Comparative AnalysisAngelo Porta, Ginevra Bruzzone, Stefano CividiniMilanoUniversità commerciale Luigi Bocconi1989Quaderni di ricercaCentro di economia monetaria e finanziaria Paolo Baffi34Porta,Angelo<1948- >308472Bruzzone,Ginevra83964Cividini,Stefano376124ITUNINARICAUNIMARCBK990003190870403321Paper 1/34SESSESSeparation of Finance and Industry453616UNINA01636nam 2200457 450 991052372510332120220905190514.09783030777302(electronic bk.)9783030777296(MiAaPQ)EBC6838629(Au-PeEL)EBL6838629(CKB)20275208800041(OCoLC)1291314772(PPN)25938934X(EXLCZ)992027520880004120220905d2022 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierAdvanced SPICE model for GaN HEMTs (ASM-HEMT) a new industry-standard compact model for GaN-based power and RF circuit design /Sourabh KhandelwalCham, Switzerland :Springer,[2022]©20221 online resource (194 pages)Print version: Khandelwal, Sourabh Advanced SPICE Model for GaN HEMTs (ASM-HEMT) Cham : Springer International Publishing AG,c2021 9783030777296 Includes bibliographical references and index.Modulation-doped field-effect transistorsRadio frequency integrated circuitsSemiconductorsModulation-doped field-effect transistors.Radio frequency integrated circuits.Semiconductors.621.3815284Khandelwal Sourabh1077178MiAaPQMiAaPQMiAaPQ9910523725103321Advanced SPICE Model for GaN HEMTs (ASM-HEMT)2588558UNINA