03292oam 2200457 450 991048371040332120210615104123.0981-15-6912-610.1007/978-981-15-6912-8(CKB)4100000011715873(DE-He213)978-981-15-6912-8(MiAaPQ)EBC6452841(PPN)25325163X(EXLCZ)99410000001171587320210615d2021 uy 0engurnn|008mamaatxtrdacontentcrdamediacrrdacarrierEmerging non-volatile memory technologies physics, engineering, and applications /Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya, editors1st ed. 2021.Singapore :Springer,[2021]©20211 online resource (VIII, 438 p. 254 illus., 231 illus. in color.) 981-15-6910-X Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions -- Spin Transfer Torque Magnetoresistive Random Access Memory -- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications -- Electric-field-controlled MRAM: Physics and Applications -- Chiral Magnetic Domain Wall & Skyrmion Memory Devices -- Circuit Design for Non-volatile Magnetic Memory -- Domain Wall Programmable Magnetic Logic -- 3D Nanomagnetic Logic -- Spintronics for Neuromorphic Engineering -- Resistive Random Access Memory: Device Physics and Array Architectures -- RRAM Characterization and Modelling -- RRAM-based Neuromorphic Computing Systems -- An Automatic Sound Classification Framework with Non-Volatile Memory.This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.Nonvolatile random-access memoryTechnological innovationsNonvolatile random-access memoryTechnological innovations.621.39732Lew Wen SiangLim Gerard JosephDananjaya Putu AndhitaMiAaPQMiAaPQUtOrBLWBOOK9910483710403321Emerging non-volatile memory technologies2831742UNINA