01217nam0 22002891i 450 SUN005762520070212120000.088-464-3329-720070212d2002 |0itac50 baitaIT|||| |||||ˆLa ‰pratica della valutazioneper chi analizza alternative di processo operativo, investimento, organizzazione, portafoglio progetti, prodotto, policy e per chi deve decidereVittorio MasoniMilanoAngelic2002255 p.23 cm.001SUN00204372001 Azienda moderna470210 MilanoAngeli.AziendeGestioneFISUNC001919MilanoSUNL000284658.401321Masoni, VittorioSUNV0456097496AngeliSUNV000073650ITSOL20181109RICASUN0057625UFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI GIURISPRUDENZA00 CONS VI.Eh.51 00 32711 UFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI GIURISPRUDENZA32711CONS VI.Eh.51paPratica della valutazione706919UNICAMPANIA05594nam 2200673Ia 450 991046539990332120200520144314.01-299-28104-4981-4390-05-4(CKB)2560000000099514(EBL)1143290(OCoLC)830161979(SSID)ssj0000950758(PQKBManifestationID)12361615(PQKBTitleCode)TC0000950758(PQKBWorkID)10879885(PQKB)11599657(MiAaPQ)EBC1143290(WSP)00002907(Au-PeEL)EBL1143290(CaPaEBR)ebr10674363(CaONFJC)MIL459354(EXLCZ)99256000000009951420120107d2012 uy 0engurcn|||||||||txtccrSilicon solid state devices and radiation detection[electronic resource] /Claude Leroy, Pier-Giorgio RancoitaSingapore ;Hackensack, N. J. World Scientific Publishing Co. Pte Ltdc20121 online resource (430 p.)Description based upon print version of record.981-4390-04-6 Includes bibliographical reference (p. 373-400) and index.Contents; Preface; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles1.2 Collision and Radiation Energy-Losses of Electrons and Positrons 1.2.1 Collision Losses and the Most Probable Energy-Loss; 1.2.2 Radiation Energy-Losses; 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons; 1.3.1 Scattering Cross Section of Electrons on Nuclei; 1.3.1.1 Interpolated Expression for RMott; 1.3.1.2 Screened Coulomb Potentials; 1.3.1.3 Finite Nuclear Size; 1.3.1.4 Finite Rest Mass of Target Nucleus; 1.3.2 Nuclear Stopping Power of Electrons; 1.3.3 Non-Ionizing Energy-Loss of Electrons; 1.4 Interactions of Photons with Matter; 1.4.1 Photoelectric Effect; 1.4.2 Compton Effect1.4.3 Pair Production 1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields; 1.4.4 Absorption of Photons in Silicon; 2. Physics and Properties of Silicon Semiconductor; 2.1 Structure and Growth of Silicon Crystals; 2.1.1 Imperfections and Defects in Crystals; 2.2 Energy Band Structure and Energy Gap; 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon; 2.2.2 Effective Mass; 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon; 2.3 Carrier Concentration and Fermi Level; 2.3.1 Effective Density-of-States2.3.1.1 Degenerate and Non-Degenerate Semiconductors 2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers; 2.3.2 Donors and Acceptors; 2.3.2.1 Extrinsic Semiconductors and Fermi Level; 2.3.2.2 Compensated Semiconductors; 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors; 2.3.2.4 Quasi-Fermi Levels; 2.3.3 Largely Doped and Degenerate Semiconductors; 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors; 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors; 3. Transport Phenomena in Semiconductors3.1 Thermal and Drift Motion in Semiconductors 3.1.1 Drift and Mobility; 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations; 3.1.2 Resistivity; 3.2 Diffusion Mechanism; 3.2.1 Einstein's Relationship; 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors; 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes; 3.3.1.1 Bulk Processes in Direct Semiconductors; 3.3.1.2 Bulk Processes in Indirect Semiconductors; 3.3.1.3 Surface Recombination; 3.3.1.4 Lifetime of Minority Carriers in Silicon; 3.4 The Continuity Equations3.4.1 The Dielectric Relaxation Time and Debye LengthThis book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope in the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments, including in outer space and in the medical environment. This book also covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest develoSemiconductor nuclear countersDesign and constructionSemiconductor nuclear countersMaterialsSilicon carbideElectronic books.Semiconductor nuclear countersDesign and construction.Semiconductor nuclear countersMaterials.Silicon carbide.539.20287Leroy Claude185045Rancoita Pier-Giorgio749957MiAaPQMiAaPQMiAaPQBOOK9910465399903321Silicon solid state devices and radiation detection2202837UNINA