02421nam 22006011 450 991046487450332120200520144314.03-03813-148-2(CKB)3710000000025521(EBL)1869136(SSID)ssj0001127796(PQKBManifestationID)11634362(PQKBTitleCode)TC0001127796(PQKBWorkID)11152749(PQKB)10457050(MiAaPQ)EBC1869136(Au-PeEL)EBL1869136(CaPaEBR)ebr10777855(OCoLC)860712680(EXLCZ)99371000000002552120070910d2007 uy 0engur|n|---|||||txtccrHgCDTe system reference guide /D. J. Fisher, editorStafa-Zuerich, Switzerland :TTP, Trans Tech Publications,[2007]©20071 online resource (201 p.)Defects and diffusion forum,1012-0386 ;v. 267Description based upon print version of record.3-908451-44-2 Includes bibliographical references and indexes.HgCdTe System - Reference Guide; Table of Contents; AbstractsThis system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys. As an aid to those working on this system, this volume summarizes known diffDiffusion and defect data.Pt. A,Defect and diffusion forum ;v. 267.Physical metallurgyDiffusionSolidsDefectsElectronic books.Physical metallurgy.Diffusion.SolidsDefects.669.95Fisher D. J727312MiAaPQMiAaPQMiAaPQBOOK9910464874503321HgCDTe system2183761UNINA