03209oam 2200613I 450 991046179430332120200520144314.00-429-11283-1981-4364-03-710.1201/b13063 (CKB)2670000000272706(EBL)1044824(OCoLC)815735348(SSID)ssj0000778850(PQKBManifestationID)11452212(PQKBTitleCode)TC0000778850(PQKBWorkID)10768693(PQKB)10918343(MiAaPQ)EBC1044824(Au-PeEL)EBL1044824(CaPaEBR)ebr10611469(CaONFJC)MIL694607(OCoLC)892793676(EXLCZ)99267000000027270620180331d2013 uy 0engur|n|---|||||txtccrCMOS nanoelectronics innovative devices, architectures, and applications /edited by Nadine CollaertSingapore :Pan Stanford Pub.,2013.1 online resource (444 p.)Description based upon print version of record.1-322-63325-8 981-4364-02-9 Includes bibliographical references.Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETsThis book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new dMolecular electronicsNanotechnologyElectronic books.Molecular electronics.Nanotechnology.621.3815Collaert Nadine992695MiAaPQMiAaPQMiAaPQBOOK9910461794303321CMOS nanoelectronics2273143UNINA