02365nam 2200613Ia 450 991045501180332120200520144314.00-8018-7358-4(CKB)111056486618316(EBL)3318189(SSID)ssj0000217794(PQKBManifestationID)12029640(PQKBTitleCode)TC0000217794(PQKBWorkID)10212127(PQKB)11631372(MiAaPQ)EBC3318189(Au-PeEL)EBL3318189(CaPaEBR)ebr10021666(OCoLC)923191646(EXLCZ)9911105648661831620700424d2001 uy 0engur|n|---|||||txtccrThe Papers of Dwight David Eisenhower[electronic resource] the presidency : keeping the peaceXX /editors : Louis Galambos, Daun Van EeeBaltimore Johns Hopkins Press20011 online resource (656 p.)Description based upon print version of record.0-8018-6699-5 ""Contents""; ""VII Berlin and the Chance for a Summit: MARCH 1959 TO AUGUST 1959""; ""16 A “staunch bulwark resigns�""; ""17 “Sources of division� among allies""; ""18 “These extremist approaches�""; ""19 Khrushchev in America""; ""20 “No substitute for personal contact�""; ""21 “Progress in a knotty problem�""; ""22 Disaster in Paris""World War, 1939-1945United StatesWorld War, 1939-1945CampaignsPresidentsUnited StatesElection1952PresidentsUnited StatesArchivesUnited StatesPolitics and government1953-1961Electronic books.World War, 1939-1945World War, 1939-1945Campaigns.PresidentsElectionPresidents973.921/092/4BEisenhower Dwight D(Dwight David),1890-1969.239784Galambos Louis120171Van Ee Daun1946-857296MiAaPQMiAaPQMiAaPQBOOK9910455011803321The Papers of Dwight David Eisenhower1914236UNINA05417nam 2200649Ia 450 991083039420332120170810191447.01-281-84314-897866118431443-527-61774-43-527-61775-2(CKB)1000000000377066(EBL)481335(OCoLC)289075526(SSID)ssj0000120436(PQKBManifestationID)11146453(PQKBTitleCode)TC0000120436(PQKBWorkID)10102320(PQKB)11182201(MiAaPQ)EBC481335(PPN)153531282(EXLCZ)99100000000037706619960213d2004 uy 0engur|n|---|||||txtccrChemical mechanical planarization of microelectronic materials[electronic resource] /Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. GutmannWeinheim Wiley-VCH20041 online resource (339 p.)Description based upon print version of record.0-471-13827-4 Includes bibliographical references and index.Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication8.1.1 Polysilicon CMP for Deep Trench Capacitor FabricationChemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now.ChemicaMicroelectronicsMaterialsGrinding and polishingMicroelectronicsMaterials.Grinding and polishing.621.3815621.38152Steigerwald Joseph M1680970Murarka S. P463885Gutmann Ronald J1680971MiAaPQMiAaPQMiAaPQBOOK9910830394203321Chemical mechanical planarization of microelectronic materials4050047UNINA