03678nam 2200577 450 991043325360332120230825162932.03-666-30195-93-647-30195-7https://doi.org/10.13109/9783666301957(CKB)4100000007151646(MiAaPQ)EBC5593546(ScCtBLL)dad4b141-8e0e-45af-acbe-04f39eefef26(oapen)https://directory.doabooks.org/handle/20.500.12854/39757(EXLCZ)99410000000715164620181217d2018 uy 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierJewish refugees in Shanghai 1933-1947 a selection of documents /by Irene Eber1 ed.Vandenhoeck & Ruprecht2018Göttingen :Vandenhoeck & Ruprecht,[2018]©20181 online resource (737 pages)Archiv jüdischer Geschichte und Kultur / Archive of Jewish History and Culture, Band 33-525-30195-2 Rund 20.000 Juden, zumeist aus Deutschland und Österreich, flohen seit Mitte der 1930er Jahre vor nationalsozialistischer Verfolgung nach Shanghai, wo sie trotz zunehmender Bedrängung durch die japanischen Besatzungsbehörden einen sicheren Zufluchtsort fanden. Unter schwierigen Bedingungen versuchten die Neuankömmlinge in den folgenden Jahren ihr materielles Auskommen sowie ein kulturelles Gemeindeleben zu organisieren. Die im vorliegenden Band edierten 184 Quellen dokumentieren nicht nur diese Bemühungen, sondern auch die Unterstützung vonseiten lokaler jüdischer Hilfskomitees sowie anderer, zumeist jüdischer internationaler Hilfsorganisationen. Zudem werden die Reaktionen von Nazi-Behörden in Deutschland und ihren Shanghaier Vertretungen sowie von japanischer und chinesischer Seite auf die Ereignisse beleuchtet. Die Dokumente auf Deutsch, Englisch, Jiddisch, Hebräisch, Russisch und Chinesisch sind annotiert, teilweise übersetzt und von Einleitungen, Karten und Fotografien begleitet.Around 20,000 Jews, mostly from Germany and Austria, escaped Nazi persecution at the end of the 1930s and fled to Shanghai. In the face of generally difficult conditions and increasing harassment from the Japanese occupation authorities, they sought to both secure their material livelihood and organize their social and cultural life. The 184 sources in German, English, Russian, Hebrew, Yiddish and Chinese of this volume document these efforts, as well as the support work by local relief committees and other, mostly Jewish, international aid organizations. In addition, some describe the reactions of the Nazi authorities to their Shanghai escape, while others reflect Chinese attitudes to the events.Archiv jüdischer Geschichte und Kultur / Archive of Jewish History and Culture, Band 3JewsCultural assimilationUnited StatesBusiness enterprisesFinanceSocial ScienceJewish StudiesJewsCultural assimilationBusiness enterprisesFinance.305.8924073Eber Irene1929-2019904322von Rohden FraukeedtEber Irene1929-2019edtDiner Danothvon Rohden FraukeothEber Irene1929-2019othMiAaPQMiAaPQMiAaPQBOOK9910433253603321Jewish refugees in Shanghai 1933-19472022032UNINA05346nam 2200625Ia 450 991082998570332120230421045201.01-282-01047-697866120104773-527-61463-X3-527-61462-1(CKB)1000000000579466(EBL)481735(OCoLC)310371090(SSID)ssj0000134231(PQKBManifestationID)11147964(PQKBTitleCode)TC0000134231(PQKBWorkID)10055469(PQKB)11269360(MiAaPQ)EBC481735(EXLCZ)99100000000057946619970609d1997 uy 0engur|n|---|||||txtccrCVD of compound semiconductors[electronic resource] precursor synthesis, development and applications /Anthony C. Jones, Paul O'BrienWeinheim, Germany ;Cambridge VCHc19971 online resource (354 p.)Description based upon print version of record.3-527-29294-2 Includes bibliography and index.CVD of Compound Semiconductors; Contents; 1 Basic Concepts; 1.1 Introduction; 1.2 Compound Semiconductors; 1.3 Description of the Band Gap; 1.3.1 Density of States; 1.3.2 Extrinsic Semiconductors; 1.3.3 Characterizing Carrier Concentrations; 1.3.4 Direct and Indirect Band Gaps; 1.3.5 Photoluminescence Spectroscopy; 1.3.6 p-n Junctions; 1.4 General Structural Properties of Compound Semiconductors; 1.5 Applications of III-V Semiconductors; 1.5.1 Light Emitting Diodes; 1.5.2 Solid State Lasers; 1.6 Structural Properties and Applications of II-VI Semiconductors; 1.7 III-VI Semiconductors1.8 Vapor Phase Techniques1.8.1 Methods of Crystal Growth; 1.8.2 Historical Perspective; 1.8.3 Basic Principles of MOVPE, CBE and ALE; 1.8.3.1 Metalorganic Vapor Phase Epitaxy (MOVPE); 1.8.3.2 Chemical Beam Epitaxy; 1.8.3.3 Photoassisted Processes; 1.8.3.4 Atomic Layer Epitaxy (ALE); 1.9 References; 2 Precursor Chemistry; 2.1 Introduction; 2.2 Group IIIA Metalorganic Precursors; 2.2.1 Aluminum Chemistry; 2.2.2 Gallium; 2.2.3 Indium; 2.2.4 Group III Metal Alkyl Adducts; 2.2.5 Metalorganic Precursor Purity; 2.3 Analysis Techniques; 2.3.1 Determination of Trace Metal Impurities2.3.2 Determination of Organic Impurities2.3.3 Identification of Impurities in the Semiconductor Layer; 2.4 Purification of Group III Trialkyl Compounds; 2.4.1 Classical Purification Techniques; 2.4.2 Adduct Purification Techniques; 2.5 Group II Metalorganic Precursors; 2.5.1 Dialkylzinc Compounds; 2.5.2 Other Group II Metalorganic Precursors; 2.6 Purification of Group II Precursors; 2.6.1 Adduct Purification of Group II Metalorganic Precursors; 2.7 Compounds of Phosphorus, Arsenic and Antimony; 2.7.1 Alkylarsenic Compounds; 2.7.2 Alkyl Phosphorus Hydrides; 2.7.3 Alkylantimony Compounds2.8 Group VI Metalorganic Precursors2.8.1 Compounds of Sulfur, Selenium, and Tellurium; 2.9 Thermal Stability of Metalorganic Precursors; 2.9.1 DSC Data for Group III Metalorganics; 2.9.2 Base-Free Trialkyls, R3M; 2.9.3 Adducts of Group III Trialkyls; 2.9.4 Precursors Containing an Al-Hydride Bond; 2.9.5 DSC Data for Group II Alkyls; 2.9.6 Conclusions; 2.10 References; 3 MOVPE of III-V Compounds; 3.1 Introduction; 3.2 Growth of Gallium Arsenide (GaAs); 3.2.1 Growth Using Conventional Precursors; 3.2.1.1 Me/Ga/AsH3; 3.2.1.2 Et/Ga/AsH3; 3.2.2 Growth of GaAs Using Alternative Ga Precursors3.2.3 Growth of GaAs Using Alternative As Precursors3.2.3.1 Precursor Requirements; 3.2.3.2 Trialkylarsenic Precursors; 3.2.3.3 Alkylarsenic Hydride Precursors; 3.2.3.4 Alternative Arsenic Precursors Containing Other Functional Groups; 3.3 Growth of Aluminum Gallium Arsenide (AlGaAs); 3.3.1 Growth of AlGaAs Using Conventional Precursors; 3.3.1.1 Carbon Incorporation; 3.3.1.2 Oxygen Incorporation; 3.3.2 Growth of AlGaAs Using Alternative A1 Precursors; 3.3.2.1 AlGaAs Growth Using Methyl-Based Alternatives; 3.3.2.2 AlGaAs Growth Using Ethyl-Based Alternatives3.3.2.3 AlGaAs Growth Using Higher Al AlkylsChemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials.Topics included:* techniques for compound semiconductor growth* metalorganic precursors for III-V MOVPE* metalorganic precursors for II-VI MOVPE* siCompound semiconductorsDesign and constructionChemical vapor depositionCompound semiconductorsDesign and construction.Chemical vapor deposition.621.38152660.2977Jones Anthony C622070O'Brien PaulPh.D.737853MiAaPQMiAaPQMiAaPQBOOK9910829985703321CVD of compound semiconductors1461185UNINA