04441nam 2201381z- 450 9910404088103321202102113-03928-503-3(CKB)4100000011302257(oapen)https://directory.doabooks.org/handle/20.500.12854/46257(oapen)doab46257(EXLCZ)99410000001130225720202102d2020 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierEmerging Memory and Computing Devices in the Era of Intelligent MachinesMDPI - Multidisciplinary Digital Publishing Institute20201 online resource (276 p.)3-03928-502-5 Computing systems are undergoing a transformation from logic-centric towards memory-centric architectures, where overall performance and energy efficiency at the system level are determined by the density, performance, functionality and efficiency of the memory, rather than the logic sub-system.History of engineering and technologybicssc3D-stackedanalogue computingannealing temperaturesassociative processorBCHbioelectronic devicesbiologic gatebiomemorybionanohybrid materialbioprocessorbipolar resistive switching characteristicsblockchainchalcogenidecharacter recognitioncharge spreadingconductive filamentconfigurable logic-in-memory architectureconvolutional neural networkscrossbarcrossbar arrayCUDAdata retentiondecoderDRAMdynamic voltage scalingECGelectrochemical metallization (ECM)electrochemical metallization cellemerging technologiesFast Fourier Transformflash memoryflip-flopfloating gateGalois fieldGPUguide trainingHebbian traininghybridiBMimage classificationin-DRAM cachein-memory computingInternet of thingsion conductionlogic-in-memorylow-latencylow-powerlow-power techniquemagnetic tunnel junctionmagnetoresistive random access memorymatrix-vector multiplicationMCU (microprogrammed control unit)memory wallmemristormulti-level celln/ananoparticlesneuromorphic computingneuromorphic systemnon-von neumann architecturenon-von Neumann architecturenonvolatile memorynucleic acidOxygen-related trapperpendicular Nano Magnetic Logic (pNML)phase change memoryplasma treatmentpower gatingprogrammable ramp-down current pulsesproteinquantum point contactreal-time systemresistance switching mechanismresistive memoryresistive random access memory (RRAM)RISC-Vself-directed channel (SDC)silicon oxide-based memristorssolution-based dielectricSONOSSTT-MRAMsynaptic weighttask placementU-shape recessed channelvariabilityvoltage-controlled magnetic anisotropyWeibull distributionwire resistanceHistory of engineering and technologyKhalili Pedramauth1332355BOOK9910404088103321Emerging Memory and Computing Devices in the Era of Intelligent Machines3040881UNINA