04850nam 2201249z- 450 991036756520332120231214133708.03-03921-280-X(CKB)4100000010106094(oapen)https://directory.doabooks.org/handle/20.500.12854/57568(EXLCZ)99410000001010609420202102d2019 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierRadiation Tolerant ElectronicsMDPI - Multidisciplinary Digital Publishing Institute20191 electronic resource (210 p.)3-03921-279-6 Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.single event effectsradiation-hardening-by-design (RHBD)frequency divider by twosingle event upsetImage processingCMOS analog integrated circuitsFPGAtotal ionizing dose (TID)Impulse Sensitive Functionsoft errorhardening by designradiation hardening by designX-raysSingle-Event Upsets (SEUs)line bufferheavy ionsVHDLFPGA-based digital controllerradiation hardening by design (RHBD)radiation hardeningSRAM-based FPGAproton irradiationring oscillatorsensor readout ICfault tolerancespace applicationphysical unclonable functionvoltage controlled oscillator (VCO)Ring Oscillatorsanalog single-event transient (ASET)single event opset (SEU)SEBsingle event upsetsbipolar transistortotal ionizing doseprotonstriple modular redundancy (TMR)gain degradationspace electronicssaturation effectconfiguration memoryCo-60 gamma radiationtotal ionization dose (TID)frequency synthesizersCMOSPLLTDCsingle-event upsets (SEUs)bandgap voltage reference (BGR)4MRsingle-shoterror ratesRadiation Hardening by Designsoft errorsheavy-ionssingle-event effects (SEE)single event transient (SET)SEE testingproton irradiation effectsRFICsingle event upset (SEU)FMRionizationradiation toleranttriplex-duplexneutron irradiation effectsdigital integrated circuitssingle event gate rupture (SEGR)power MOSFETsring-oscillatorselective hardeningvoltage referencenuclear fusionTMRgamma-raysgamma rayinstrumentation amplifierradiation effectsreference circuitsradiation-hardenedLeroux Paulauth720924BOOK9910367565203321Radiation Tolerant Electronics3024594UNINA