01531nam 2200337 450 991034793870332120231209100029.01-5044-6119-310.1109/IEEESTD.2019.8886679(CKB)4100000009750538(NjHacI)994100000009750538(EXLCZ)99410000000975053820231209d2019 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierC62.59-2019 IEEE standard for test methods and preferred values for silicon PN-junction clamping diodes /Institute of Electrical and Electronics EngineersNew York, New York :IEEE,2019.1 online resource (41 pages)Supersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.Diodes, SemiconductorDiodes, Semiconductor.621.3815NjHacINjHaclDOCUMENT9910347938703321C62.59-20193648596UNINA