01622nam 2200361z- 450 991034690850332120231214133543.01000021579(CKB)4920000000101437(oapen)https://directory.doabooks.org/handle/20.500.12854/40629(EXLCZ)99492000000010143720202102d2011 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierAlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applicationsKIT Scientific Publishing20111 electronic resource (XI, 230 pages)Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.3-86644-615-2 This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.MMIC designpower amplifierAlGaN/GaN HEMTX-bandpower-added efficiencyKühn Jutta1318410BOOK9910346908503321AlGaN3033210UNINA