03971nam 2200973z- 450 991034684690332120231214133626.03-03897-843-4(CKB)4920000000095171(oapen)https://directory.doabooks.org/handle/20.500.12854/62681(EXLCZ)99492000000009517120202102d2019 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierWide Bandgap Semiconductor Based Micro/Nano DevicesMDPI - Multidisciplinary Digital Publishing Institute20191 electronic resource (138 p.)3-03897-842-6 While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.ohmic contactMESFEToptical band gapwide-bandgap semiconductorannealing temperaturejunction termination extension (JTE)channel length modulationsilicon carbide (SiC)amorphous InGaZnO (a-IGZO)light output powerGaNelectrochromismlarge signal performancepassivation layer4H-SiCpositive gate bias stress (PGBS)asymmetric power combiningultrahigh upper gate heighthigh electron mobility transistorsspace applicationgallium nitride (GaN)phase balanceedge terminationdistributed Bragg reflectorcathode field plate (CFP)ammonothermal GaNanode field plate (AFP)W bandGaN high electron mobility transistor (HEMT)1T DRAMgrowth of GaNtungsten trioxide filmthin-film transistor (TFT)micron-sized patterned sapphire substratepower added efficiencyT-anodeanalytical modelAlGaN/GaNharsh environmenthigh-temperature operationamplitude balancebuffer layercharacteristic lengthKu-bandDIBL effectI-V kink effectflip-chip light-emitting diodeshigh electron mobility transistors (HEMTs)power amplifiersidewall GaNexternal quantum efficiencybreakdown voltage (BV)threshold voltage (Vth) stabilityregrown contactAlGaN/GaN HEMTTCADhigh electron mobility transistor (HEMT)Seo Jung-Hunauth1329320BOOK9910346846903321Wide Bandgap Semiconductor Based Micro3039421UNINA