03575nam 22008893a 450 991034683900332120250203235429.09783038979777303897977510.3390/books978-3-03897-977-7(CKB)4920000000095250(oapen)https://directory.doabooks.org/handle/20.500.12854/57740(ScCtBLL)93abc465-b531-42d5-bbd1-8c1ffeffde9b(OCoLC)1163835782(EXLCZ)99492000000009525020250203i20192019 uu engurmn|---annantxtrdacontentcrdamediacrrdacarrierRecent Advances in Novel Materials for Future SpintronicsRabah Khenata, Xiaotian Wang, Hong ChenBasel, Switzerland :MDPI,2019.1 electronic resource (152 p.)9783038979760 3038979767 As we all know, electrons carry both charge and spin. The processing of information in conventional electronic devices is based only on the charge of electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors, and insulators are the basic materials that constitute the components of electronic devices, and these types of materials have been transforming all aspects of society for over a century. In contrast, magnetic metals, half-metals (including zero-gap half-metals), magnetic semiconductors (including spin-gapless semiconductors), dilute magnetic semiconductors, and magnetic insulators are the materials that will form the basis for spintronic devices. This book aims to collect a range of papers on novel materials that have intriguing physical properties and numerous potential practical applications in spintronics.dopingspin polarizationfirst-principlequaternary Heusler alloyelectronic structurePrussian blue analoguefirst-principles calculationsfirst-principles calculationmagnetic anisotropypressureNb (100) surfaceDzyaloshinskii-Moriya interactionoptical propertiesskyrmionequiatomic quaternary Heusler compoundsHeusler alloyinterface structurefirst principlesmagnetismspin transportfirst-principles methodmonolayer CrSi2half-metallic materialH adsorptionhalf-metallic materialslattice dynamicsspin gapless semiconductorfirst-principle calculationshalf-metallicitybulk CrSi2covalent hybridizationH diffusionelectronic propertyMgBi2O6physical natureMo dopingphase stabilitymechanical anisotropyquaternary Heusler compoundmagnetic propertiesexchange energyKhenata Rabah1788192Wang XiaotianChen HongScCtBLLScCtBLLBOOK9910346839003321Recent Advances in Novel Materials for Future Spintronics4322703UNINA