01559nam0 2200325 i 450 SUN005545220180424091847.902978-05-213-3943-80.0020061108d1990 |0engc50 baengGB|||| |||||ˆAn ‰introduction to general relativityL. P. Hughston and K. P. TodCambridgeCambridge university1990183 p.24 cm.001SUN00242172001 London Mathematical Society student texts5210 CambridgeCambridge university.83-XXRelativity and gravitational theory [MSC 2020]MFSUNC02324353B50Applications of local differential geometry to the sciences [MSC 2020]MFSUNC023316CambridgeSUNL000024Hughston, L. P.SUNV043954725919Tod, Kenneth P.SUNV04395342348Cambridge universitySUNV000097650Tod, Kenneth PaulTod, Kenneth P.SUNV059504Tod, K. P.Tod, Kenneth P.SUNV043955ITSOL20201019RICAhttps://books.google.it/books?id=2q5Rdjn0qfgC&pg=PA73&dq=9780521339438&hl=it&sa=X&ved=0ahUKEwiV4o-hr9LaAhVHShQKHadtBIcQuwUILTAA#v=onepage&q=9780521339438&f=falseSUN0055452UFFICIO DI BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08PREST 83-XX 1982 08 2427 I 20061108 Introduction to general relativity1424794UNICAMPANIA05211nam 22013453a 450 991034668000332120250203235435.09783039210114303921011410.3390/books978-3-03921-011-4(CKB)4920000000094867(oapen)https://directory.doabooks.org/handle/20.500.12854/53550(ScCtBLL)37e93ab9-a4d7-4112-b934-c2c1321eef75(OCoLC)1117851599(oapen)doab53550(EXLCZ)99492000000009486720250203i20192019 uu engurmn|---annantxtrdacontentcrdamediacrrdacarrierMiniaturized TransistorsLado Filipovic, Tibor GrasserMDPI - Multidisciplinary Digital Publishing Institute2019Basel, Switzerland :MDPI,2019.1 electronic resource (202 p.)9783039210107 3039210106 What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.History of engineering and technologybicsscMOSFETtotal ionizing dose (TID)low power consumptionprocess simulationtwo-dimensional materialnegative-capacitancepower consumptiontechnology computer aided design (TCAD)thin-film transistors (TFTs)band-to-band tunneling (BTBT)nanowiresinversion channelmetal oxide semiconductor field effect transistor (MOSFET)spike-timing-dependent plasticity (STDP)field effect transistorsegregationsystematic variationsSentaurus TCADindium selenidenanosheetstechnology computer-aided design (TCAD)high-? dielectricsubthreshold bias rangestatistical variationsfin field effect transistor (FinFET)compact modelsnon-equilibrium Green's functionetching simulationhighly miniaturized transistor structurecompact modelsilicon nanowiresurface potentialSilicon-Germanium source/drain (SiGe S/D)nanowireplasma-aided molecular beam epitaxy (MBE)phonon scatteringmobilitysilicon-on-insulatordrain engineereddevice simulationvariabilitysemi-floating gatesynaptic transistorneuromorphic systemtheoretical modelCMOSferroelectricstunnel field-effect transistor (TFET)SiGemetal gate granularityburied channelON-statebulk NMOS devicesambipolarpiezoelectricstunnel field effect transistor (TFET)FinFETspolarizationfield-effect transistorline edge roughnessrandom discrete dopantsradiation hardened by design (RHBD)low energyflux calculationdoping incorporationlow voltagetopography simulationMOS deviceslow-frequency noisehigh-klayoutlevel setprocess variationssubthresholdmetal gate stackelectrostatic discharge (ESD)History of engineering and technologyFilipovic Lado1309634Grasser TiborScCtBLLScCtBLLBOOK9910346680003321Miniaturized Transistors4319013UNINA