00787cam1 22002411 450 SOBE0007015320220311084837.020220311g00009999|||||ita|0103 baitaIT<<La >>formazione dello Stato moderno in Italialezioni di storia del diritto italianoGuido AstutiTorinoG. Giappichelliv.26 cmCorsi universitari001LAEC000178352001 *Corsi universitari001SOBE000701522001 1 / Guido AstutiASTUTI, GuidoAF0001979307068673ITUNISOB20220311RICASOBE00070153M 102 Monografia moderna SBNMFormazione dello Stato moderno in Italia218627UNISOB05211nam 22013453a 450 991034668000332120250203235435.09783039210114303921011410.3390/books978-3-03921-011-4(CKB)4920000000094867(oapen)https://directory.doabooks.org/handle/20.500.12854/53550(ScCtBLL)37e93ab9-a4d7-4112-b934-c2c1321eef75(OCoLC)1117851599(oapen)doab53550(EXLCZ)99492000000009486720250203i20192019 uu engurmn|---annantxtrdacontentcrdamediacrrdacarrierMiniaturized TransistorsLado Filipovic, Tibor GrasserMDPI - Multidisciplinary Digital Publishing Institute2019Basel, Switzerland :MDPI,2019.1 electronic resource (202 p.)9783039210107 3039210106 What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.History of engineering and technologybicsscMOSFETtotal ionizing dose (TID)low power consumptionprocess simulationtwo-dimensional materialnegative-capacitancepower consumptiontechnology computer aided design (TCAD)thin-film transistors (TFTs)band-to-band tunneling (BTBT)nanowiresinversion channelmetal oxide semiconductor field effect transistor (MOSFET)spike-timing-dependent plasticity (STDP)field effect transistorsegregationsystematic variationsSentaurus TCADindium selenidenanosheetstechnology computer-aided design (TCAD)high-? dielectricsubthreshold bias rangestatistical variationsfin field effect transistor (FinFET)compact modelsnon-equilibrium Green's functionetching simulationhighly miniaturized transistor structurecompact modelsilicon nanowiresurface potentialSilicon-Germanium source/drain (SiGe S/D)nanowireplasma-aided molecular beam epitaxy (MBE)phonon scatteringmobilitysilicon-on-insulatordrain engineereddevice simulationvariabilitysemi-floating gatesynaptic transistorneuromorphic systemtheoretical modelCMOSferroelectricstunnel field-effect transistor (TFET)SiGemetal gate granularityburied channelON-statebulk NMOS devicesambipolarpiezoelectricstunnel field effect transistor (TFET)FinFETspolarizationfield-effect transistorline edge roughnessrandom discrete dopantsradiation hardened by design (RHBD)low energyflux calculationdoping incorporationlow voltagetopography simulationMOS deviceslow-frequency noisehigh-klayoutlevel setprocess variationssubthresholdmetal gate stackelectrostatic discharge (ESD)History of engineering and technologyFilipovic Lado1309634Grasser TiborScCtBLLScCtBLLBOOK9910346680003321Miniaturized Transistors4319013UNINA