05522nam 2201441z- 450 991034666430332120231214133547.03-03921-226-5(CKB)4920000000095024(oapen)https://directory.doabooks.org/handle/20.500.12854/54256(EXLCZ)99492000000009502420202102d2019 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierNanoelectronic Materials, Devices and ModelingMDPI - Multidisciplinary Digital Publishing Institute20191 electronic resource (242 p.)3-03921-225-7 As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.quantum mechanicalneuromorphic computationoff-current (Ioff)double-gate tunnel field-effect-transistortopological insulatorback current blocking layer (BCBL)CMOS power amplifier ICinformation integrationdistributed Braggspike-timing-dependent plasticityelectron affinityenhancement-modecurrent collapsegallium nitride (GaN)band-to-band tunnelingvertical field-effect transistor (VFET)ionic liquidluminescent centresthermal couplingvision localizationPC1DUAVZnO/Sidual-switching transistormemristorfield-effect transistorhigher order synchronizationshallow trench isolation (STI)memristive deviceon-current (Ion)low voltagereflection transmision methoddielectric layersource/drain (S/D)high efficiencynanostructure synthesisInAlN/GaN heterostructuresupercapacitorhigh-electron mobility transistor (HEMTs)heterojunctionp-GaNrecessed channel array transistor (RCAT)gate field effectcharge injectionsaddle FinFET (S-FinFET)L-shaped tunnel field-effect-transistorconductivityenergy storagehierarchicalPECVDsample gratingMISHEMTbistabilitythreshold voltage (VTH)bandgap tuningoscillatory neural networksUV irradiationMott transitionthird harmonic tuningtopological magnetoelectric effectcross-gain modulation2D materialsolar cellssilicon on insulator (SOI)Green's functionoptoelectronic devicessemiconductor optical amplifierZnO filmsgrapheneAlGaN/GaNpolarization effecttwo-photon processconductive atomic force microscopy (cAFM)2DEG densityvanadium dioxideinterface trapspotential drop width (PDW)pattern recognitiondrain-induced barrier lowering (DIBL)atomic layer deposition (ALD)normally off power devicesgate-induced drain leakage (GIDL)insulator-metal transition (IMT)zinc oxidesynaptic devicesubthreshold slope (SS)landingsiliconcorner-effectconditioned reflexquantum dotgallium nitridebismuth ionsconduction band offsetvariational formLi Qiliangauth1328703Zhu HaoauthBOOK9910346664303321Nanoelectronic Materials, Devices and Modeling3038849UNINA