00846nam0 2200265 450 00000797920071023105324.020070618d1946----km-y0itay50------baitaITy-------001yy<<La >>costituente russa (18 gennaio 1918)Ruggero MinerbiFirenzeSansoni194687 p.18 cmStudi storici per la Costituente72001Studi storici per la Costituente7Russia - Assemblea costituente - 1918947.084120Minerbi,Ruggero352841ITUNIPARTHENOPE20070618RICAUNIMARC000007979SSC 340/77915NAVA12007SSC 340/7 (1)s.i.NAVA12007Costituente russa (18 gennaio 1918606560UNIPARTHENOPE03481nam 22005295 450 991033765380332120200701071759.03-030-04513-710.1007/978-3-030-04513-5(CKB)4100000007204757(MiAaPQ)EBC5614872(DE-He213)978-3-030-04513-5(PPN)232967199(EXLCZ)99410000000720475720181213d2019 u| 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierDevice Physics, Modeling, Technology, and Analysis for Silicon MESFET /by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry1st ed. 2019.Cham :Springer International Publishing :Imprint: Springer,2019.1 online resource (125 pages)3-030-04512-9 Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.Electronic circuitsElectronicsMicroelectronicsCircuits and Systemshttps://scigraph.springernature.com/ontologies/product-market-codes/T24068Electronic Circuits and Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31010Electronics and Microelectronics, Instrumentationhttps://scigraph.springernature.com/ontologies/product-market-codes/T24027Electronic circuits.Electronics.Microelectronics.Circuits and Systems.Electronic Circuits and Devices.Electronics and Microelectronics, Instrumentation.621.3815284Amiri Iraj Sadeghauthttp://id.loc.gov/vocabulary/relators/aut720753Mohammadi Hosseinauthttp://id.loc.gov/vocabulary/relators/autHosseinghadiry Mahdiarauthttp://id.loc.gov/vocabulary/relators/autBOOK9910337653803321Device Physics, Modeling, Technology, and Analysis for Silicon MESFET2294622UNINA