04413nam 22007695 450 991030038490332120200701151138.03-319-06157-710.1007/978-3-319-06157-3(CKB)3710000000125758(EBL)1782902(SSID)ssj0001277474(PQKBManifestationID)11803944(PQKBTitleCode)TC0001277474(PQKBWorkID)11257030(PQKB)10889608(MiAaPQ)EBC1782902(DE-He213)978-3-319-06157-3(PPN)179768042(EXLCZ)99371000000012575820140603d2014 u| 0engur|n|---|||||txtccrQuantitative Recombination and Transport Properties in Silicon from Dynamic Luminescence /by Johannes Giesecke1st ed. 2014.Cham :Springer International Publishing :Imprint: Springer,2014.1 online resource (296 p.)Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053Description based upon print version of record.1-322-13506-1 3-319-06156-9 Includes bibliographical references.Introduction -- Solar Cell Operation -- Dynamics of Charge Carriers -- Luminescence of Silicon -- Harmonically Modulated Lifetime -- Constraints of Dynamic Carrier Lifetime Techniques -- Evolution of the Experimental Setup -- Conceptual Advances: Recombination Properties -- Conceptual Advances: Transport Properties -- Summary and Outlook.Harmonically modulated luminescence combines the advantages of highly sensitive luminescence metrology with an immediate dynamic access to carrier lifetime in semiconductors at a minimum of required a priori information. The present work covers theoretical, conceptual, and experimental advances of the harmonically modulated luminescence technique. Theoretical constraints of dynamic carrier lifetime techniques are rigorously elaborated, including the proof of their differential nature and their characteristics at nonuniform spatial distributions of recombination rate. The pathway toward a unified, reliable, and versatile harmonically modulated carrier lifetime metrology is delineated - covering the entire solar cell production chain from bare ingots to finished solar cells. Accurate access to miscellaneous relevant recombination and transport properties via harmonically modulated luminescence is demonstrated and experimentally validated, embracing injection-dependent carrier lifetimes at extremely low injection conditions, a spatially resolved carrier lifetime calibration of luminescence images, and accurate approaches to both net dopant concentration and minority carrier mobility.Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053SemiconductorsEnergy systemsMaterials—SurfacesThin filmsRenewable energy resourcesSemiconductorshttps://scigraph.springernature.com/ontologies/product-market-codes/P25150Energy Systemshttps://scigraph.springernature.com/ontologies/product-market-codes/115000Surfaces and Interfaces, Thin Filmshttps://scigraph.springernature.com/ontologies/product-market-codes/Z19000Energy Systemshttps://scigraph.springernature.com/ontologies/product-market-codes/115000Renewable and Green Energyhttps://scigraph.springernature.com/ontologies/product-market-codes/111000Semiconductors.Energy systems.Materials—Surfaces.Thin films.Renewable energy resources.Semiconductors.Energy Systems.Surfaces and Interfaces, Thin Films.Energy Systems.Renewable and Green Energy.537.6226Giesecke Johannesauthttp://id.loc.gov/vocabulary/relators/aut791825MiAaPQMiAaPQMiAaPQBOOK9910300384903321Quantitative Recombination and Transport Properties in Silicon from Dynamic Luminescence1770463UNINA