02635oam 2200421 450 991029974770332120190911103512.01-4614-7909-610.1007/978-1-4614-7909-3(OCoLC)871239036(MiFhGG)GVRL6UYP(EXLCZ)99255000000115155020130826d2014 uy 0engurun|---uuuuatxtccrBias temperature instability for devices and circuits /Tibor Grasser, editor1st ed. 2014.New York :Springer,2014.1 online resource (xi, 810 pages) illustrations (some color)Gale eBooksDescription based upon print version of record.1-4614-7908-8 Includes bibliographical references.Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits.This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.Metal oxide semiconductor field-effect transistorsMetal oxide semiconductor field-effect transistors.621.3192Grasser TiborMiFhGGMiFhGGBOOK9910299747703321Bias Temperature Instability for Devices and Circuits1979701UNINA