04180nam 22006255 450 991029958870332120200704064541.0981-10-5290-510.1007/978-981-10-5290-3(CKB)4100000000586849(DE-He213)978-981-10-5290-3(MiAaPQ)EBC5024551(PPN)204531993(EXLCZ)99410000000058684920170906d2018 u| 0engurnn|008mamaatxtrdacontentcrdamediacrrdacarrierQuaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors From Materials to Devices /by Sourav Adhikary, Subhananda Chakrabarti1st ed. 2018.Singapore :Springer Singapore :Imprint: Springer,2018.1 online resource (XIII, 63 p. 35 illus., 16 illus. in color.) 981-10-5289-1 Includes bibliographical references at the end of each chapters and index.Chapter 1: Introduction -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- Chapter 6: Summary and Future Work.This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and  responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.Electronic circuitsLasersPhotonicsSignal processingImage processingSpeech processing systemsCircuits and Systemshttps://scigraph.springernature.com/ontologies/product-market-codes/T24068Electronic Circuits and Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31010Optics, Lasers, Photonics, Optical Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31030Signal, Image and Speech Processinghttps://scigraph.springernature.com/ontologies/product-market-codes/T24051Electronic circuits.Lasers.Photonics.Signal processing.Image processing.Speech processing systems.Circuits and Systems.Electronic Circuits and Devices.Optics, Lasers, Photonics, Optical Devices.Signal, Image and Speech Processing.621.3815Adhikary Souravauthttp://id.loc.gov/vocabulary/relators/aut1063485Chakrabarti Subhanandaauthttp://id.loc.gov/vocabulary/relators/autBOOK9910299588703321Quaternary Capped In(Ga)As2532676UNINA