01265nam a22002771i 450099100208294970753620040123141336.0040407s2003 it |||||||||||||||||eng b12868176-39ule_instARCHE-084779ExLDip.to Scienze StoricheitaA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l.380.1457Keloharju, Matti485915Strategic behavior and underpricing in uniform price auctions :evidence from Finnish treasury auctions /Matti Keloharju, Kjell G. Nyborg and Kristian RydqvistMilano :Fondazione ENI Enrico Mattei,200341 p. ;21 cmNote di lavoro della Fondazione ENI Enrico Mattei ;25.2003Vendite all'astaFinlandiaRydqvist, KristianNyborg, Kjell G.authorhttp://id.loc.gov/vocabulary/relators/aut485920.b1286817602-04-1416-04-04991002082949707536LE009 GEOG.COLL.14L/2512009000319929le009-E0.00-l- 00000.i1342906116-04-04Strategic behavior and underpricing in uniform price auctions1747262UNISALENTOle00916-04-04ma -engit 0101239nam0 22003133i 450 MIL056107120231121125550.020160224d1977 ||||0itac50 baitaitz01i xxxe z01nAppunti di storia e di diritto dei trattatiad uso degli studentiMaria Rita Saulle, Livia Barberio CorsettiRomaEdizioni Ricerchestampa 1977259 p.24 cm.TrattatiDirittoFIRCFIC180327NTRATTATISTORIAFIRIEIC086788I341.3721Saulle, Maria RitaCFIV014179070120024Barberio Corsetti, LiviaRAVV074567070482228ITIT-0120160224IT-RM0542 IT-FR0017 BIBLIOTECA DEL MINISTERO DEGLI AFFARI ESTERIRM0542 NBiblioteca umanistica Giorgio ApreaFR0017 NMIL0561071Biblioteca umanistica Giorgio Aprea 52DCB Sau.App. 52DUP0009021865 VMB RS A 2019032520190325 09 52Appunti di storia e di diritto dei trattati3610789UNICAS04141nam 22005535 450 991029956470332120200702222623.0981-10-6550-010.1007/978-981-10-6550-7(CKB)4100000000881594(DE-He213)978-981-10-6550-7(MiAaPQ)EBC5116905(PPN)220123217(EXLCZ)99410000000088159420171030d2018 u| 0engurnn|008mamaatxtrdacontentcrdamediacrrdacarrierAnalytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor /by Iraj Sadegh Amiri, Mahdiar Ghadiry1st ed. 2018.Singapore :Springer Singapore :Imprint: Springer,2018.1 online resource (IX, 86 p. 55 illus., 16 illus. in color.) SpringerBriefs in Applied Sciences and Technology,2191-530X981-10-6549-7 Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene.This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.SpringerBriefs in Applied Sciences and Technology,2191-530XNanotechnologyElectronic circuitsNanotechnology and Microengineeringhttps://scigraph.springernature.com/ontologies/product-market-codes/T18000Electronic Circuits and Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31010Nanotechnologyhttps://scigraph.springernature.com/ontologies/product-market-codes/Z14000Nanotechnology.Electronic circuits.Nanotechnology and Microengineering.Electronic Circuits and Devices.Nanotechnology.621.3815284Amiri Iraj Sadeghauthttp://id.loc.gov/vocabulary/relators/aut720753Ghadiry Mahdiarauthttp://id.loc.gov/vocabulary/relators/autMiAaPQMiAaPQMiAaPQBOOK9910299564703321Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor2524117UNINA