03441nam 22006495 450 991025404290332120200704175826.03-319-31572-210.1007/978-3-319-31572-0(CKB)3710000000746190(DE-He213)978-3-319-31572-0(MiAaPQ)EBC4584909(PPN)194515850(EXLCZ)99371000000074619020160704d2016 u| 0engurnn|008mamaatxtrdacontentcrdamediacrrdacarrierEmerging Resistive Switching Memories /by Jianyong Ouyang1st ed. 2016.Cham :Springer International Publishing :Imprint: Springer,2016.1 online resource (VIII, 93 p. 73 illus., 41 illus. in color.) SpringerBriefs in Materials,2192-10913-319-31570-6 Includes bibliographical references at the end of each chapters.Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.SpringerBriefs in Materials,2192-1091NanotechnologyElectronic circuitsElectronicsMicroelectronicsComputer memory systemsNanotechnologyhttps://scigraph.springernature.com/ontologies/product-market-codes/Z14000Electronic Circuits and Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31010Electronics and Microelectronics, Instrumentationhttps://scigraph.springernature.com/ontologies/product-market-codes/T24027Memory Structureshttps://scigraph.springernature.com/ontologies/product-market-codes/I12034Nanotechnology.Electronic circuits.Electronics.Microelectronics.Computer memory systems.Nanotechnology.Electronic Circuits and Devices.Electronics and Microelectronics, Instrumentation.Memory Structures.621.39732Ouyang Jianyongauthttp://id.loc.gov/vocabulary/relators/aut1065406MiAaPQMiAaPQMiAaPQBOOK9910254042903321Emerging Resistive Switching Memories2545268UNINA