05524nam 22006734a 450 991014374600332120170810183606.01-280-24169-197866102416990-470-01208-00-470-01207-2(CKB)1000000000356121(EBL)241130(OCoLC)72696123(SSID)ssj0000115892(PQKBManifestationID)11131358(PQKBTitleCode)TC0000115892(PQKBWorkID)10027299(PQKB)11416828(MiAaPQ)EBC241130(EXLCZ)99100000000035612120040823d2005 uy 0engur|n|---|||||txtccrBulk crystal growth of electronic, optical & optoelectronic materials[electronic resource] /edited by Peter CapperChichester ;Hoboken, NJ John Wiley & Sonsc20051 online resource (579 p.)Wiley series in materials for electronic and optoelectronic applicationsDescription based upon print version of record.0-470-85142-2 Includes bibliographical references and index.Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical)2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth5.4.1 ChallengesA valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamondsInternational group of contributors from academia and industry provide a balanced treatmentIncludes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa</ulWiley series in materials for electronic and optoelectronic applications.SemiconductorsMaterialsOptoelectronicsMaterialsCrystal growthElectronic books.SemiconductorsMaterials.OptoelectronicsMaterials.Crystal growth.621.3815251.12bclCapper Peter463569MiAaPQMiAaPQMiAaPQBOOK9910143746003321Bulk crystal growth of electronic, optical & optoelectronic materials2075981UNINA03729 am 2200769 n 450 9910214935303321201703152-86906-441-110.4000/books.pufr.5448(CKB)3710000001633358(FrMaCLE)OB-pufr-5448(oapen)https://directory.doabooks.org/handle/20.500.12854/57667(PPN)202672964(EXLCZ)99371000000163335820170602j|||||||| ||| 0enguu||||||m||||txtrdacontentcrdamediacrrdacarrierReading Percival Everett European Perspectives /Claude Julien, Anne-Laure TissutTours Presses universitaires François-Rabelais20171 online resource (247 p.) 2-86906-229-X Les écrivains afro-américains participent volontiers à des colloques consacrés à leur œuvre en Europe, au motif que les chercheurs de ce côté de l'Atlantique s'intéressent à des aspects textuels fréquemment laissés de côté par les lecteurs étasuniens. Les essais rassemblés dans le présent volume découlent d'une réunion soutenue par le Conseil Scientifique de l'Université de Tours. D'autres essais furent sollicités par la suite afin que le présent volume soit, autant que faire se pouvait, à jour des nouvelles publications de l'auteur. Nous remercions Percival Everett de sa précieuse collaboration lors des débats, et de la longue interview qu'il nous a autorisés à transcrire ici. African-American writers willingly attend European symposiums dealing with their work because scholars here focus on textual aspects American readers frequently leave aside. The essays collected here arose on the occasion of such a symposium sponsored by the Conseil Scientifique de l'Université François-Rabelais de Tours. Other essays were commissioned later in order to make the collection as complete as possible when new books came out. We wish to thank Percival Everett for his enlightening collaboration during the debates, as well as for the long interview he has allowed us to transcribe here.Literary Theory &amp; CriticismLiterature AmericanPercival Everettlittérature de langue anglaiselittératureÉtats-UnisUnited StatesliteratureEnglish literaturePercival EverettlittératureÉtats-Unislittérature de langue anglaiseLiterary Theory &amp; CriticismLiterature AmericanPercival Everettlittérature de langue anglaiselittératureÉtats-UnisUnited StatesliteratureEnglish literatureBerben-Masi Jacqueline1307419Birat Kathie1080449Bonnemère Yves1307420Clary Françoise1307414Everett Percival1142025Feith Michel1298016Gysin Fritz1307421Julien Claude375453Kurjatto-Renard Patrycja1307422Mills Alice1174459Paquet-Deyris Anne-Marie1305145Sanconie Maïca1307417Tissut Anne-Laure1285578Julien Claude375453Tissut Anne-Laure1285578FR-FrMaCLEBOOK9910214935303321Reading Percival Everett3028769UNINA