01791oam 2200457zu 450 991014569120332120210807003133.01-5090-9617-5(CKB)1000000000711160(SSID)ssj0000395653(PQKBManifestationID)12144179(PQKBTitleCode)TC0000395653(PQKBWorkID)10456853(PQKB)11610667(EXLCZ)99100000000071116020160829d2006 uy engtxtccr2006 International Workshop on Nano CMOS : proceedings : Jan. 30, 31, Feb. 1, 2006, TORAY Sougou Kensyu Center, 21-9 Suehiro, Mishima, Shizuoka, 411-0032 Japan[Place of publication not identified]IEEE Electron Devices Society2006Bibliographic Level Mode of Issuance: Monograph1-4244-0603-X Metal oxide semiconductors, ComplementaryDesign and constructionCongressesNanoelectronicsCongressesElectrical & Computer EngineeringHILCCEngineering & Applied SciencesHILCCElectrical EngineeringHILCCMetal oxide semiconductors, ComplementaryDesign and constructionNanoelectronicsElectrical & Computer EngineeringEngineering & Applied SciencesElectrical Engineering621.39/5International Workshop on Nano CMOSPQKBPROCEEDING99101456912033212006 International Workshop on Nano CMOS : proceedings : Jan. 30, 31, Feb. 1, 2006, TORAY Sougou Kensyu Center, 21-9 Suehiro, Mishima, Shizuoka, 411-0032 Japan2514204UNINA