05524nam 22006734a 450 991014374600332120170810183606.01-280-24169-197866102416990-470-01208-00-470-01207-2(CKB)1000000000356121(EBL)241130(OCoLC)72696123(SSID)ssj0000115892(PQKBManifestationID)11131358(PQKBTitleCode)TC0000115892(PQKBWorkID)10027299(PQKB)11416828(MiAaPQ)EBC241130(EXLCZ)99100000000035612120040823d2005 uy 0engur|n|---|||||txtccrBulk crystal growth of electronic, optical & optoelectronic materials[electronic resource] /edited by Peter CapperChichester ;Hoboken, NJ John Wiley & Sonsc20051 online resource (579 p.)Wiley series in materials for electronic and optoelectronic applicationsDescription based upon print version of record.0-470-85142-2 Includes bibliographical references and index.Contents; Series Preface; Preface; Acknowledgements; List of Contributors; Abbreviations; 1 Silicon; 1.1 Introduction; 1.2 Crystal-growth method and technology; 1.2.1 High-purity polycrystalline silicon; 1.2.2 CZ-Si growth apparatus and related furnace parts; 1.2.3 CZ-Si crystal growth; 1.2.4 FZ (float-zone) Si crystal growth; 1.2.5 Wafer processing; 1.3 Melt process; 1.3.1 Analysis of heat- and mass-transfer processes; 1.3.2 Oxygen transportation process and mechanism; 1.3.3 Control of oxygen concentration by application of cusp magnetic field; 1.4 Defect and wafer quality1.4.1 Oxygen precipitation and gettering1.4.2 Grown-in defects; 1.5 Concluding remarks; References; 2 Growth of Gallium Arsenide; 2.1 Introduction; 2.2 Doping considerations; 2.3 Growth techniques; 2.3.1 Horizontal Bridgman and horizontal gradient freeze techniques; 2.3.2 Liquid encapsulated Czochralski (LEC) technique; 2.3.3 Vertical gradient freeze (VGF) technique; 2.4 Crystalline defects in GaAs; 2.4.1 Defects in melt-grown, semi-insulating GaAs; 2.5 Impurity and defect analysis of GaAs (chemical); 2.6 Impurity and defect analysis of GaAs (electrical)2.6.1 Introduction to the electrical analysis of defects in GaAs2.7 Impurity and defect analysis of GaAs (optical); 2.7.1 Optical analysis of defects in GaAs; 2.8 Conclusions; Acknowledgments; References; 3 Computer Modelling of Bulk Crystal Growth; 3.1 Introduction; 3.2 Present state of bulk crystal growth modelling; 3.3 Bulk crystal growth processes; 3.4 Transport modelling in bulk crystal growth; 3.4.1 Governing equations; 3.4.2 Boundary conditions; 3.4.3 Continuum interface representation; 3.4.4 Radiation heat-transfer modelling; 3.4.5 Noninertial reference frames; 3.4.6 Magnetic fields3.4.7 Turbulence3.5 Computer-aided analysis; 3.5.1 Discretization; 3.5.2 Numerical interface representation; 3.5.3 Deforming grids and ALE methods; 3.5.4 A simple fixed-grid method; 3.5.5 Quasi-steady-state models; 3.6 Modelling examples; 3.6.1 Float-zone refinement of silicon sheets; 3.6.2 Bridgman growth of CZT: axisymmetric analysis; 3.6.3 Bridgman growth of CZT: three-dimensional analysis; 3.6.4 Morphological stability in solution growth of KTP; 3.7 Summary and outlook; Acknowledgments; References; 4 Indium Phosphide Crystal Growth; 4.1 Introduction; 4.2 Material properties; 4.3 Hazards4.4 Crystal structure4.5 Synthesis; 4.6 Single-crystal growth; 4.7 Defects; 4.7.1 Twins; 4.7.2 Dislocations; 4.8 Dislocation reduction; 4.9 VGF growth; 4.10 Crystal-growth modelling; 4.11 Dopants; 4.11.1 N-type InP; 4.11.2 P-type InP; 4.11.3 Semi-insulating InP; 4.12 Conclusion; Acknowledgements; References; 5 Bulk Growth of InSb and Related Ternary Alloys; 5.1 Introduction-a little history; 5.2 Why the interest?; 5.3 Key properties; 5.3.1 Crystallography; 5.3.2 Growth-critical material parameters; 5.3.3 Common growth conditions; 5.3.4 Impurities and dopants; 5.4 Czochralski growth5.4.1 ChallengesA valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamondsInternational group of contributors from academia and industry provide a balanced treatmentIncludes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa</ulWiley series in materials for electronic and optoelectronic applications.SemiconductorsMaterialsOptoelectronicsMaterialsCrystal growthElectronic books.SemiconductorsMaterials.OptoelectronicsMaterials.Crystal growth.621.3815251.12bclCapper Peter463569MiAaPQMiAaPQMiAaPQBOOK9910143746003321Bulk crystal growth of electronic, optical & optoelectronic materials2075981UNINA00982nam0-2200313 --450 991041955790332120230328132532.0978-88-430-6728-2IT2013-71120201014d2013----kmuy0itay5050 baitaIT 001yyFamiglia e malattiauna prospettiva relazionale in psicologia della salutea cura di Francesco Tramonti e Alessandra TongiorgiRomaCarocci2013199 p.22 cmBiblioteca di testi e studi845Malati croniciAssistenza familiarePsicologiaPsicologia ambientale - Famiglia155.916Tramonti,FrancescoTongiorgi,AlessandraITUNINAREICATUNIMARCBK9910419557903321150.3361 TRAF 01BRAU 2020/523FLFBCFLFBCFamiglia e malattia1758604UNINA