02101nam 2200493I 450 991070098150332120150918155903.0(CKB)5470000002413209(OCoLC)921505424(EXLCZ)99547000000241320920150918j201012 ua 0engurcn|||||||||txtrdacontentcrdamediacrrdacarrierThe mothball, sustainment, and proposed reactivation of the hypersonic tunnel facility (HTF) at NASA Glenn Research Center Plum Brook Station /Scott R. Thomas [and four others]Cleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,December 2010.1 online resource (14 pages) color illustrationsNASA/TM ;2010-216936Title from title screen (viewed Sept. 18, 2015)."December 2010.""Prepared for the 27th Aerodynamic Measurement Technology and Ground Testing Conference sponsored by the American Institute of Aeronautics and Astronautics, Chicago, Illinois, June 28 to July 1, 2010."Includes bibliographical references (page 10).Mothball, sustainment, and proposed reactivation of the hypersonic tunnel facility Hypersonic wind tunnelsnasatTest facilitiesnasatHypersonic flightnasatHypersonic speednasatPropulsionnasatHypersonic wind tunnels.Test facilities.Hypersonic flight.Hypersonic speed.Propulsion.Thomas Scott R(Engineer),1413894NASA Glenn Research Center,Fundamental Aeronautics Program (U.S.),GPOGPOBOOK9910700981503321The mothball, sustainment, and proposed reactivation of the hypersonic tunnel facility (HTF) at NASA Glenn Research Center Plum Brook Station3534423UNINA04217nam 2200757I 450 991014090670332120240612143638.097804708911791-118-03823-11-283-37262-297866133726280-470-89117-30-470-89116-5(CKB)2670000000056359(EBL)624471(OCoLC)680017841(SSID)ssj0000414264(PQKBManifestationID)11313111(PQKBTitleCode)TC0000414264(PQKBWorkID)10385330(PQKB)11243318(MiAaPQ)EBC624471(PPN)167841793(EXLCZ)99267000000005635920100423d2010 uy 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierCMOS circuit design, layout, and simulation /R. Jacob BakerThird editionHoboken, NJ John Wiley & Sons, Inc.[2010]©20101 online resource (1214 pages)IEEE Press series on microelectronic systemsDescription based upon print version of record.9780470881323 0-470-88132-1 Includes bibliographical references and index.CMOS Circuit Design, Layout, and Simulation; Contents; Preface; Chapter 1 Introduction to CMOS Design; Chapter 2 The Well; Chapter 3 The Metal Layers; Chapter 4 The Active and Poly Layers; Chapter 5 Resistors, Capacitors, MOSFETs; Chapter 6 MOSFET Operation; Chapter 7 CMOS Fabrication; Chapter 8 Electrical Noise: An Overview; Chapter 9 Models for Analog Design; Chapter 10 Models for Digital Design; Chapter 11 The Inverter; Chapter 12 Static Logic Gates; Chapter 13 Clocked Circuits; Chapter 14 Dynamic Logic Gates; Chapter 15 VLSI Layout Examples; Chapter 16 Memory CircuitsChapter 17 Sensing Using ?S ModulationChapter 18 Special Purpose CMOS Circuits; Chapter 19 Digital Phase-Locked Loops; Chapter 20 Current Mirrors; Chapter 21 Amplifiers; Chapter 22 Differential Amplifiers; Chapter 23 Voltage References; Chapter 24 Operational Amplifiers I; Chapter 25 Dynamic Analog Circuits; Chapter 26 Operational Amplifiers II; Chapter 27 Nonlinear Analog Circuits; Chapter 28 Data Converter Fundamentals; Chapter 29 Data Converter Architectures; Chapter 30 Implementing Data Converters; Chapter 31 Feedback Amplifiers; Index; About the AuthorThe Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IIEEE Press series on microelectronic systemsMetal oxide semiconductors, ComplementaryDesign and constructionIntegrated circuitsDesign and constructionMetal oxide semiconductor field-effect transistorsMetall-òxid-semiconductors complementarisDisseny i construcciólemacCircuits integratslemacTransistors MOSFETlemacMetal oxide semiconductors, ComplementaryDesign and construction.Integrated circuitsDesign and construction.Metal oxide semiconductor field-effect transistors.Metall-òxid-semiconductors complementarisDisseny i construccióCircuits integratsTransistors MOSFET621.3815621.39/732Baker R. Jacob1964-324727MiAaPQMiAaPQMiAaPQBOOK9910140906703321CMOS835323UNINA