02560oam 2200433zu 450 991014089140332120241212220018.097814244568401424456843(CKB)2670000000058844(SSID)ssj0000527291(PQKBManifestationID)12178360(PQKBTitleCode)TC0000527291(PQKBWorkID)10526010(PQKB)10190729(NjHacI)992670000000058844(EXLCZ)99267000000005884420160829d2010 uy engur|||||||||||txtccr2010 22nd IEEE International Semiconductor Laser Conference[Place of publication not identified]IEEE20101 online resourceBibliographic Level Mode of Issuance: Monograph9781424456833 1424456835 Ultrashort laser sources with pulse durations in the sub-picosecond regime enable a new domain of precision machining of various materials. Pulse durations shorter than the electron-phonon coupling time lead to minimum thermal load or even non-thermal ablation processes. Exploiting non-linear absorption processes, the absorption becomes nearly material independent when laser pulses of several micro joule energy and high beam quality are focused on the materials surface. Very small pulse energies and high intensities well above the vaporization threshold enable high-precision cutting, ablation and drilling of even weakly absorbing materials, multi-component and multi-layer systems. Additionally, focusing ultrafast laser pulses in the volume of transparent dielectrics allows localized modification of the bulk material. Specifically, defined refractive index changes in glasses and crystals can be utilized for wave guiding and beam forming applications. In addition, a combined approach of material modification followed by chemical etching provides the possibility to manufacture micro-channels or 3D-micro mechanical parts. The 3D-capability of the in-volume materials processing by selective laser etching "ISLE" originates from the non-linear absorption of light in the initially transparent material.Semiconductor lasersCongressesSemiconductor lasers621.366IEEE StaffPQKBPROCEEDING99101408914033212010 22nd IEEE International Semiconductor Laser Conference2527056UNINA