05240nam 2200625Ia 450 991014060600332120170810192433.01-282-68431-097866126843191-4443-2023-81-4443-2021-1(CKB)2670000000014773(EBL)514445(OCoLC)609862965(SSID)ssj0000358550(PQKBManifestationID)11265264(PQKBTitleCode)TC0000358550(PQKBWorkID)10376921(PQKB)10702593(MiAaPQ)EBC514445(EXLCZ)99267000000001477320091120d2010 uy 0engur|n|---|||||txtccrCrystal growth processes based on capillarity[electronic resource] czochralski, floating zone, shaping and crucible techniques /edited by Thierry DuffarChichester, West Sussex ;Hoboken, N.J. Wiley20101 online resource (567 p.)Description based upon print version of record.0-470-71244-9 Includes bibliographical references and index.Crystal Growth Processes Based on Capillarity: Czochralski, Floating Zone,Shaping and Crucible Techniques; Contents; Preface; Introduction; Acknowledgements; Nomenclature; Contributors; 1: Basic Principles of Capillarity in Relation to Crystal Growth; 1.1 Definitions; 1.1.1 Characteristic Energies of Surfaces and Interfaces; 1.1.2 Capillary Pressure; 1.1.3 Surface Energy versus Surface Tension; 1.2 Contact Angles; 1.2.1 Thermodynamics; 1.2.2 Dynamics of Wetting; 1.2.3 Measurements of Contact Angle and Surface Tension by the Sessile Drop Technique1.2.4 Selected Data for the Contact Angle for Systems of Interest for Crystal Growth1.3 Growth Angles; 1.3.1 Theory; 1.3.2 Measurements of Growth Angles: Methods and Values; 1.3.3 Application of the Growth Angle Condition in Simulations of Crystal Growth; 1.3.4 Summary; Acknowledgements; References; 2: The Possibility of Shape Stability in Capillary Crystal Growth and Practical Realization of Shaped Crystals; 2.1 Crucible-Free Crystal Growth - Capillary Shaping Techniques; 2.2 Dynamic Stability of Crystallization - the Basis of Shaped Crystal Growth by CST; 2.2.1 Lyapunov Equations2.2.2 Capillary Problem - Common Approach2.2.3 Equation of Crystal Dimension Change Rate; 2.2.4 Equation of Crystallization Front Displacement Rate; 2.2.5 Stability Analysis in a System with Two Degrees of Freedom; 2.3 Stability Analysis and Growth of Shaped Crystals by the Cz Technique; 2.3.1 Capillary Problem; 2.3.2 Temperature Distribution in the Crystal-Melt System; 2.3.3 Stability Analysis and Shaped Crystal Growth; 2.3.4 Dynamic Stability Problem for the Kyropoulos Technique; 2.4 Stability Analysis and Growth of Shaped Crystals by the Verneuil Technique2.4.1 Principal Schemes of Growth2.4.2 Theoretical Investigation; 2.4.3 Practical Results of the Theoretical Analysis; 2.4.4 Stability Analysis-Based Automation; 2.5 Stability Analysis and Growth of Shaped Crystals by the FZ Technique; 2.6 TPS Techniques: Capillary Shaping and Impurity Distribution; 2.6.1 Capillary Boundary Problem for TPS; 2.6.2 Stability Analysis; 2.6.3 Experimental Tests of the Capillary Shaping Theory Statements; 2.6.4 Impurity Distribution; 2.6.5 Definition of TPS; 2.6.6 Brief History of TPS; 2.7 Shaped Growth of Ge , Sapphire, Si, and Metals: a Brief Presentation2.7.1 Ge2.7.2 Sapphire; 2.7.3 Si; 2.7.4 Metals and Alloys; 2.8 TPS Peculiarities; References; 3: Czochralski Process Dynamics and Control Design; 3.1 Introduction and Motivation; 3.1.1 Overview of Cz Control Issues; 3.1.2 Diameter Control; 3.1.3 Growth Rate Control; 3.1.4 Reconstruction of Quantities not Directly Measured; 3.1.5 Specific Problems for Control in Cz Crystal Growth; 3.1.6 PID Control vs. Model-Based Control; 3.1.7 Components of a Control System; 3.1.8 Modelling in Crystal Growth Analysis and Control; 3.2 Cz Control Approaches; 3.2.1 Proper Choice of Manipulated Variables3.2.2 Feedforward ControlThe demand for large, high-quality single crystals has increased rapidly as a result of the growing semiconductor and optics industry, where perfect single crystals are used as substrates or components for devices. Crystal Growth Processes Based on Capillarity covers all crystal growth techniques and explains why and how they are dependent on liquid surface phenomena, or capillarity. Each chapter addresses fundamental capillary effects, detailed experimental developments, technically important processes, and associated software. The book includes: Basic prinCrystal growthCrystallizationElectronic books.Crystal growth.Crystallization.548.5548/.5Duffar Thierry882849MiAaPQMiAaPQMiAaPQBOOK9910140606003321Crystal growth processes based on capillarity1972251UNINA02123oam 2200421 a 450 991069623150332120071126154322.0(CKB)5470000002376508(OCoLC)173257094(EXLCZ)99547000000237650820070924d2007 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierSeptember 11[electronic resource] problems remain in planning for and providing health screening and monitoring services for responders : testimony before the Committee on Homeland Security, House of Representatives /Cynthia A. Bascetta[Washington, D.C.] :U.S. Govt. Accountability Office,[2007]25 pages digital, PDF fileTestimony ;GAO-07-1253 TTitle from title screen (viewed on Sept. 24, 2007)."For release on delivery ... Thursday, September 20, 2007."Paper version available from: U.S. Govt. Acountability Office, 441 G St., NW, Rm. LM, Washington, D.C. 20548.Includes bibliographical references.This testimony discusses (1) status of services provided by the Department of Health and Human Services' (HHS) WTC Federal Responder Screening Program, (2) efforts by the Centers for Disease Control and Prevention's National Institute for Occupational Safety and Health (NIOSH) to provide services for nonfederal responders residing outside the New York City (NYC) area, and (3) lessons learned from WTC health programs.September 11 September 11 Terrorist Attacks, 2001Health aspectsSeptember 11 Terrorist Attacks, 2001Health aspects.Bascetta Cynthia A.1953-1380697United States.Congress.House.Committee on Homeland Security.United States.Government Accountability Office.EJBEJBGPOBOOK9910696231503321September 113423640UNINA