01306cam0-22004451i-450-99000110929040332120051115113531.00817633162000110929FED01000110929(Aleph)000110929FED0100011092920001205d1988----km-y0itay50------baengUSa-------001yyFelix Klein and Sophus Lieevolution of the idea of symmetry in the Nineteenth CenturyI. M. Yaglomtranslated by Sergei Sossinskyedited by Hardy Grant and Abe ShenitzerBoston [MA]Birkhauser1988vii, 237 p.ill.24 cmStoria della matematicaGeometriaStoriaSimmetriaStoriaMatematiciBiografie509510.922Iaglom,Isaak Moiseevich<1921-1988>50559Grant,HardyShenitzer,AbeSossinski,SergeiITUNINARICAUNIMARCBK9900011092904033216B-11518448FI1122-F-414768MA1FI1MA101A5501A70Felix Klein and Sophus Lie337732UNINA03857nam 2201081z- 450 991059507690332120230220(CKB)5680000000080757(oapen)https://directory.doabooks.org/handle/20.500.12854/92043(oapen)doab97408(EXLCZ)99568000000008075720202209d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierSilicon NanodevicesBaselMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (238 p.)3-0365-4677-4 3-0365-4678-2 This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.Technology: general issuesbicsscanodeanti-phase boundaries (APBs)arsenatearseniteatomic layer etching (ALE)band-to-band tunnelingcharge-trap synaptic transistorCVDdark currentdetectorsdigital etchdoping effectdual-selective wet etchingepitaxial grownepitaxial growthFin etchingFinFETgermaniumGeSnGOIheteroepitaxyHfO2/Si0.7Ge0.3 gate stackHNO3 concentrationIII-V on Siin-plane nanowireinterface state densitylaserslithium-ion batterieslong-term potentiation (LTP)n/ananowire-based quantum devicesneural networkneuromorphic systemorganotrialkoxysilaneozone oxidationp+-Ge0.8Si0.2/Ge stackpassivationpattern recognitionphotodetectorsprussian blue nanoparticlesquantum computingquantum dotquasi-atomic-layer etching (q-ALE)responsivityselective epitaxial growth (SEG)selective wet etchingshort-term potentiation (STP)Si-capSi-MOSsilica beadssiliconsite-controlledspin qubitsstacked SiGe/Sithreading dislocation densities (TDDs)transistorsvertical gate-all-around (vGAA)vertical Gate-all-around (vGAA)water decontaminationyolk−shell structureTechnology: general issuesRadamson Henryedt1236601Wang GuileiedtRadamson HenryothWang GuileiothBOOK9910595076903321Silicon Nanodevices3033980UNINA