00910nam0-22003251i-450-9900000817504033210 471 86833 7000008175FED01000008175(Aleph)000008175FED0100000817520011111d--------km-y0itay50------baitay-------001yyVLSI fabrication principlessilicon and gallium arsenideSorab K. Ghandhi.New YorkWiley and sons1983X, 665 p.ill.24 cmCircuiti integrali VLSISilicioArsenuro di gallio621.381 71Ghandhi,Sorab K.5531ITUNINARICAUNIMARCBK99000008175040332113 C 06 224281FINBCFINBCVLSI fabrication principles109914UNINAING01