01920nam0 22003973i 450 VAN021961420230607093356.873N978981150046620210930d2019 |0itac50 baengSG|||| |||||Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and BeyondDoctoral Thesis accepted by Chinese Academy of Sciences, Beijing, ChinaGuilei WangSingaporeSpringer2019xvi, 115 p.ill.24 cm001VAN01041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-VAN0219620Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond187337500A79 (77-XX)Physics [MSC 2020]VANC023182MFPattern dependencyKW:KRPCVDKW:KSelective epitaxyKW:KSiGeKW:KSource/drain technologyKW:KStrainKW:KTechnology nodesKW:KSGSingaporeVANL000061WangGuileiVANV186560838756Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-981-15-0046-6E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0219614BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 4097 08eMF4097 20210930 Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond1873375UNICAMPANIA