02206nam0 22004693i 450 VAN021211020230612105950.648N978981133444320210915d2018 |0itac50 baengSG|||| |||||Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect TransistorsDoctoral Thesis accepted by the Peking University, Beijing, ChinaMengqi FuSingaporeSpringer2018xv, 102 p.ill.24 cm001VAN01041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-VAN0212116Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors186782782-XXStatistical mechanics, structure of matter [MSC 2020]VANC021931MF78-XXOptics, electromagnetic theory [MSC 2020]VANC022356MF00A79 (77-XX)Physics [MSC 2020]VANC023182MFCrystal orientationKW:KCrystal phaseKW:KElectrical propertiesKW:KElectron microscopeKW:KField-effect transistorsKW:KGrowth methodsKW:KIn-situ material characterizationKW:KInAs nanowiresKW:KIndium ArsenideKW:KMBE and MOCVDKW:KUltrathin nanowiresKW:KSGSingaporeVANL000061FuMengqiVANV182503835653Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-981-13-3444-3E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0212110BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 3778 08eMF3778 20210915 Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors1867827UNICAMPANIA