02185nam0 22004573i 450 VAN018756820230613084600.440N978331966607520210719d2017 |0itac50 baengCH|||| |||||Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic TargetsDoctoral Thesis accepted by The Complutense University of Madrid, SpainMaría Ángela Pampillón ArceChamSpringer2017xxiii, 164 p.ill.24 cm001VAN01041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-VAN0187570Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets183020700A79 (77-XX)Physics [MSC 2020]VANC023182MF74K35Thin films [MSC 2020]VANC033952MF74A50Structured surfaces and interfaces, coexistent phases [MSC 2020]VANC036162MFGadolinium OxideKW:KGadolinium ScandateKW:KHigh Permittivity DielectricsKW:KHigh Pressure SputteringKW:KInP SubstratesKW:KMIS DevicesKW:KMOSFETKW:KPlasma OxidationKW:KScandium OxideKW:KScavenging EffectKW:KCHChamVANL001889Pampillón ArceMaría Á.VANV167264821841Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-3-319-66607-5E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0187568BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 3139 08eMF3139 20210719 Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets1830207UNICAMPANIA