01942nam0 22004333i 450 VAN015718920230614085603.439N978366249683120210608d2016 |0itac50 baengDE|||| |||||ˆThe ‰Source/Drain Engineering of Nanoscale Germanium-based MOS DevicesDoctoral Thesis accepted by Peking University, Beijing, ChinaZhiqiang LiBerlinHeidelbergSpringer2016xiv, 59 p.ill.24 cm001VAN01041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-VAN0157190ˆThe ‰Source/Drain Engineering of Nanoscale Germanium-based MOS Devices180051974AxxGeneralities, axiomatics, foundations of continuum mechanics of solids [MSC 2020]VANC021919MF00A79 (77-XX)Physics [MSC 2020]VANC023182MFContact resistanceKW:KDopant activationKW:KDopant segregationKW:KGermanium-based MOSFETKW:KMOS deviceKW:KNickel germanideKW:KSource and drainKW:KThermal stabilityKW:KBerlinVANL000066DEHeidelbergVANL000282LiZhiqiangVANV095355767421Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-3-662-49683-1Ebook - Accesso al full text attraverso riconoscimento indirizzo IP di AteneoBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0157189BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 2617 08eMF2617 20210608 Source1800519UNICAMPANIA