02152nam0 2200469 i 450 VAN013281820230621104531.5N978331901970320210326d2014 |0itac50 baengCH|||| |||||Self-Organized Quantum Dots for MemoriesElectronic Properties and Carrier Dynamics Doctoral Thesis accepted by the Technical University of Berlin, GermanyTobias NowozinCham : Springer, 2014xvi153 p.ill. ; 24 cm001VAN01041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-VAN0134789Self-Organized Quantum Dots for Memories176876268-XXComputer science [MSC 2020]VANC019670MF82-XXStatistical mechanics, structure of matter [MSC 2020]VANC021931MF00A79 (77-XX)Physics [MSC 2020]VANC023182MFCoupling of Quantum Dots to a Two-dimensional SystemKW:KDeep-Level Transient Spectroscopy (DLTS)KW:KEmbedded Quantum DotsKW:KGaSb/GaAsKW:KHole StorageKW:KInAs/GaAsKW:KMany-particle Ground StatesKW:KModulation-Doped Field-Effect TransistorKW:KQuantum Dot MemoryKW:KSelf-assembled Quantum DotsKW:KCHChamVANL001889NowozinTobiasVANV106641791377Springer <editore>VANV108073650ITSOL20240614RICAhttp://doi.org/10.1007/978-3-319-01970-3E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN0132818BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08CONS e-book 2006 08eMF2006 20210326 Self-Organized Quantum Dots for Memories1768762UNICAMPANIA