01603nam0 2200337 i 450 VAN012575320220311091136.47N978981132535920191204d2018 |0itac50 baengSG|||| |||||Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial SynapsesTae-Ho LeeSingaporeSpringer2018XXI, 98 p.ill.24 cm001VAN01041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-SGSingaporeVANL000061530.417Fisica superficiale22620.1Scienze dei materiali22621.3815Componenti e circuiti22530.4175Film sottili22LeeTae-HoVANV097172769304Springer <editore>VANV108073650ITSOL20240614RICAhttps://link.springer.com/book/10.1007/978-981-13-2535-9E-book - Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI SCIENZE E TECNOLOGIE AMBIENTALI BIOLOGICHE E FARMACEUTICHEIT-CE0101VAN17NVAN0125753BIBLIOTECA DEL DIPARTIMENTO DI SCIENZE E TECNOLOGIE AMBIENTALI BIOLOGICHE E FARMACEUTICHE17CONS e-book 2112 17BIB2112/285 285 20191204 Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses1568153UNICAMPANIA