02083nam0 22004573i 450 VAN0028405420250303071129.343N978981191874220241213d2022 |0itac50 baengSG|||| |||||i e bDesigning Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPESDoctoral Thesis accepted by The University of Tokyo, Kashiwa, JapanRyo NoguchiSingaporeSpringer2022xv, 126 p.ill.24 cm001VAN001041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-74K35Thin films [MSC 2020]VANC033952MF81-XXQuantum theory [MSC 2020]VANC019967MF81V35Nuclear physics [MSC 2020]VANC023270MFAngle-resolved photoemission spectroscopyKW:KHigher-order Topological InsulatorKW:KNano-ARPESKW:KQuantum Well StateKW:KRashba Spin-Orbit CouplingKW:KSpin-resolved ARPESKW:KSurface AlloyKW:KVan der Waals MaterialKW:KWeak Topological InsulatorKW:KSGSingaporeVANL000061NoguchiRyoVANV2378061778025Springer <editore>VANV108073650ITSOL20250307RICAhttps://doi.org/10.1007/978-981-19-1874-2E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN00284054BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08DLOAD e-Book 10142 08eMF10142 20241220 Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by ARPES4300547UNICAMPANIA