02005nam0 22004453i 450 VAN0028356720250128033118.496N978303117199420241202d2022 |0itac50 baengCH|||| |||||i e bIntegrated Electronics on Aluminum NitrideMaterials and DevicesDoctoral Thesis accepted by Cornell University, USAReet ChaudhuriChamSpringer2022xvi, 255 p.ill.24 cm001VAN001041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-82-XXStatistical mechanics, structure of matter [MSC 2020]VANC021931MF94-XXInformation and communication theory, circuits [MSC 2020]VANC019701MFAluminum nitrideKW:KAluminum nitride heterostructureKW:KAluminum nitride optoelectronicsKW:KAluminum nitride waveguidesKW:KHigh-frequency communication materialsKW:KIntegrated RF electronicsKW:KRF active devicesKW:KUltra-wide bandgap electronicsKW:KUltra-wide bandgap semiconductorKW:KCHChamVANL001889ChaudhuriReetVANV2371621272129Springer <editore>VANV108073650ITSOL20250131RICAhttps://doi.org/10.1007/978-3-031-17199-4E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN00283567BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08DLOAD e-Book 9969 08eMF9969 20241211 Integrated Electronics on Aluminum Nitride2996508UNICAMPANIA