01330nam0 22002893i 450 VAN0024611120240806101405.705978-37-643-6661-220220519d2014 |0itac50 baengCH|||| |||||Advances in analysis and geometrynew developments using Clifford algebrasTao Qian ... [et al.]Basel [etc.]Birkhauser2004XIV, 376 p.ill.24 cm001VAN000590232001 Trends in mathematics210 Basel [etc.]Birkhäuser1997-VAN00246112Advances in analysis and geometry2837943CHBaselVANL002076QianTaoVANV088948Birkhäuser <editore>VANV108193650ITSOL20250214RICAhttps://books.google.bi/books?id=Wlj2BwAAQBAJ&printsec=frontcover&hl=it#v=onepage&q&f=falsehttps://books.google.bi/books?id=Wlj2BwAAQBAJ&printsec=frontcover&hl=it#v=onepage&q&f=falseBIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIAIT-CE0100VAN05VAN00246111BIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA05PREST D 022 05UBI1270 20220519 Advances in analysis and geometry2837943UNICAMPANIA04516nam 22007095 450 991030037190332120200630053045.03-319-01970-810.1007/978-3-319-01970-3(CKB)3710000000025215(EBL)1466384(OCoLC)861559041(SSID)ssj0001010803(PQKBManifestationID)11618995(PQKBTitleCode)TC0001010803(PQKBWorkID)11018178(PQKB)11312056(MiAaPQ)EBC1466384(DE-He213)978-3-319-01970-3(PPN)172424526(EXLCZ)99371000000002521520130930d2014 u| 0engur|n|---|||||txtccrSelf-Organized Quantum Dots for Memories Electronic Properties and Carrier Dynamics /by Tobias Nowozin1st ed. 2014.Cham :Springer International Publishing :Imprint: Springer,2014.1 online resource (163 p.)Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053Doctoral thesis accepted by the Technical University, Berlin, Germany.3-319-01969-4 Includes bibliographical references.Fundamentals -- Charge carriers in quantum dots -- Coupling of QDs to 2D gases -- Measurement methods -- Electronic properties of and storage times in QDs -- Carrier dynamics in quantum dots coupled to a 2DHG -- Summary and Outlook -- Storage time as a function of the localization energy -- Experimental details - Setup -- Samples -- Sample Processing -- DLTS: Error of graphical analysis -- Extrapolation of storage times.Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.   This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053SemiconductorsNanotechnologyElectronic circuitsComputer storage devicesSemiconductorshttps://scigraph.springernature.com/ontologies/product-market-codes/P25150Nanotechnologyhttps://scigraph.springernature.com/ontologies/product-market-codes/Z14000Electronic Circuits and Deviceshttps://scigraph.springernature.com/ontologies/product-market-codes/P31010Nanotechnology and Microengineeringhttps://scigraph.springernature.com/ontologies/product-market-codes/T18000Memory Structureshttps://scigraph.springernature.com/ontologies/product-market-codes/I12034Semiconductors.Nanotechnology.Electronic circuits.Computer storage devices.Semiconductors.Nanotechnology.Electronic Circuits and Devices.Nanotechnology and Microengineering.Memory Structures.004.53Nowozin Tobiasauthttp://id.loc.gov/vocabulary/relators/aut791377BOOK9910300371903321Self-Organized Quantum Dots for Memories1768762UNINA