01797nam0 22004213i 450 VAN0017781220240806101054.143N978940177597720210708d2016 |0itac50 baengNL|||| |||||Variation-Aware Advanced CMOS Devices and SRAMChanghwan ShinDordrechtSpringer2016vii, 140 p.ill.24 cm001VAN000631312001 Springer series in advanced microelectronics210 Berlin [etc.]Springer56VAN00177813Variation-Aware Advanced CMOS Devices and SRAM182062100A79 (77-XX)Physics [MSC 2020]VANC023182MFCMOS Device DesignsKW:KIntegrated circuitsKW:KLine Edge RoughnessKW:KMOSFETKW:KProcess-Induced Random VariationKW:KRandom Dopant FluctuationKW:KStatic Random Access MemoryKW:KVariation-Robust CMOSKW:KWork-function VariationKW:KNLDordrechtVANL000068ShinChanghwanVANV160082815568Springer <editore>VANV108073650ITSOL20241115RICAhttp://doi.org/10.1007/978-94-017-7597-7E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN00177812BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08DLOAD e-book 2955 08eMF2955 20210708 Variation-Aware Advanced CMOS Devices and SRAM1820621UNICAMPANIA