02141nam0 2200457 i 450 VAN0013281820240806100837.778N978331901970320210326d2014 |0itac50 baengCH|||| |||||Self-Organized Quantum Dots for MemoriesElectronic Properties and Carrier Dynamics Doctoral Thesis accepted by the Technical University of Berlin, GermanyTobias NowozinChamSpringer2014xvi, 153 p.ill.24 cm001VAN001041932001 Springer thesesrecognizing outstanding Ph.D. research210 BerlinSpringer2010-VAN00134789Self-Organized Quantum Dots for Memories176876200A79 (77-XX)Physics [MSC 2020]VANC023182MF68-XXComputer science [MSC 2020]VANC019670MF82-XXStatistical mechanics, structure of matter [MSC 2020]VANC021931MFCoupling of Quantum Dots to a Two-dimensional SystemKW:KDeep-Level Transient Spectroscopy (DLTS)KW:KEmbedded Quantum DotsKW:KGaSb/GaAsKW:KHole StorageKW:KInAs/GaAsKW:KMany-particle Ground StatesKW:KModulation-Doped Field-Effect TransistorKW:KQuantum Dot MemoryKW:KSelf-assembled Quantum DotsKW:KCHChamVANL001889NowozinTobiasVANV106641791377Springer <editore>VANV108073650ITSOL20241115RICAhttp://doi.org/10.1007/978-3-319-01970-3E-book – Accesso al full-text attraverso riconoscimento IP di Ateneo, proxy e/o ShibbolethBIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICAIT-CE0120VAN08NVAN00132818BIBLIOTECA DEL DIPARTIMENTO DI MATEMATICA E FISICA08DLOAD e-book 2006 08eMF2006 20210326 Self-Organized Quantum Dots for Memories1768762UNICAMPANIA