00957nam0 22002533i 450 VAN0006306820240806100530.42207-8033-479-520080226d2000 |0itac50 baengUS|||| |||||Advanced theory of semiconductor devicesKarl HessNew YorkInstitute of electrical and electronics engineers2000XV, 333 p.ill.24 cmUSNew YorkVANL000011HessKarlVANV050103725313IEEE <editore>VANV111634650ITSOL20250314RICABIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIAIT-CE0100VAN05VAN00063068BIBLIOTECA DEL DIPARTIMENTO DI INGEGNERIA05PREST K 312 05 4911 20080226 BuonoAdvanced theory of semiconductor devices1415916UNICAMPANIA