01502nam 2200421 450 00000637920050718115200.088-420-5221-320001206d1997----km-y0itay0103----baitaIT<<Il>> mito in GreciaFritz GrafRomaLaterza1997173 p.21 cm.Economica Laterza103Ed. orig.: München : Artemis, 1985Tit. orig.: Grieechische mythologieMitologia greca292.13(20. ed.)Religione classica. Mitologia e fondamenti mitologiciGraf,Fritz153709ITUniversità della Basilicata - B.I.A.RICAunimarc000006379Mito in Grecia75789UNIBASMONLETMONOGRLETTEREDILEO2020001206BAS010954DILEO2020001206BAS011003DILEO2120040129BAS01122420050601BAS011753batch0120050718BAS01104920050718BAS01110820050718BAS01113820050718BAS011152BAS01BAS01BOOKBASA4Polo di MateraGENCollezione generaleMSR-O V-8100806L1008062004012902Prestabile GeneraleBAS01BAS01BOOKBASA4Polo di MateraGENCollezione generaleMSR-O V-984359L843592000120602Prestabile Generale02937oam 2200445 450 991029947140332120190911112725.03-319-01165-010.1007/978-3-319-01165-3(OCoLC)862223406(MiFhGG)GVRL6XXA(EXLCZ)99371000000002563920130730d2014 uy 0engurun|---uuuuatxtccrMOSFET technologies for double-pole four-throw radio-frequency switch /Viranjay M. Srivastava, Ghanshyam Singh1st ed. 2014.Cham [Switzerland] :Springer,2014.1 online resource (xv, 199 pages) illustrations (some color)Analog Circuits and Signal Processing,1872-082X ;122Description based upon print version of record.3-319-01164-2 Includes bibliographical references and index.Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches.Analog circuits and signal processing series.Metal oxide semiconductor field-effect transistorsMetal oxide semiconductor field-effect transistors.621.3815Srivastava Viranjay Mauthttp://id.loc.gov/vocabulary/relators/aut871299Singh GhanshyamMiFhGGMiFhGGBOOK9910299471403321MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch1945045UNINA00967nam a22002531i 450099100132876970753620240619113719.0021212s1981 it |||||||||||||||||ita b12131933-39ule_instARCHE-022173ExLDip.to Filologia Ling. e Lett.itaA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l.851.9Tremonti Terigi, Alba450598Zucchero e assenzio in Vittorio Bodini /Alba Tremonti TerigiFossalta di Piave :Rebellato,1981IV, 167 p. :1 ritr. ;21 cmSaggisticaBodini, Vittorio.b1213193323-03-1801-04-03991001328769707536LE008 Cr M VII 1312008000234928le008-E0.00-l-05450.i1245075301-04-03Zucchero e assenzio in Vittorio Bodini148539UNISALENTOle008le02201-04-03ma-itait01