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1. |
Record Nr. |
UNISALENTO991000137459707536 |
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Titolo |
L'hagiographie / Guy Philippart ... [et al.] ; textes réunis par Elisabeth Gaucher et Jean Dufournet |
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Pubbl/distr/stampa |
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Descrizione fisica |
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Collana |
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Revue des sciences humaines ; 251 |
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Altri autori (Persone) |
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Philippart, Guyauthor |
Gaucher, Elisabeth |
Dufournet, Jean |
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Disciplina |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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2. |
Record Nr. |
UNINA9910140573503321 |
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Titolo |
Supercentenarians / / Heiner Maier ... [et al.] editors |
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Pubbl/distr/stampa |
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New York, : Springer, 2010 |
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ISBN |
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1-282-83937-3 |
9786612839375 |
3-642-11520-9 |
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Edizione |
[1st ed. 2010.] |
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Descrizione fisica |
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1 online resource (330 p.) |
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Collana |
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Demographic research monographs, , 1613-5520 |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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pt. 1. General -- pt. 2. Country reports -- pt. 3. Research on supercentenarians. |
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Sommario/riassunto |
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Does human mortality after age 110 continue to rise, level off, or start to decline? This book describes a concerted, international research effort undertaken with the goal of establishing a database that allows the best possible description of the mortality trajectory beyond the age of 110. The International Database on Longevity (IDL) is the result of this ongoing effort. The IDL contains exhaustive information on validated cases of supercentenarians (people 110 years and older) and allows unbiased estimates of mortality after age 110. The main finding is remarkable: human mortality after age 110 is flat at a probability of death of 50% per year. The sixteen chapters of this book discuss age validation of exceptional longevity, data on supercentenarians in a series of countries, structure and contents of the IDL, and statistical analysis of human mortality after age 110. Several chapters include short accounts of specific supercentenarians that add life to demographic research. |
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3. |
Record Nr. |
UNINA9910616370403321 |
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Autore |
Evstigneev Mykhaylo |
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Titolo |
Introduction to Semiconductor Physics and Devices / / by Mykhaylo Evstigneev |
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Pubbl/distr/stampa |
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Cham : , : Springer International Publishing : , : Imprint : Springer, , 2022 |
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ISBN |
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9783031084584 |
9783031084577 |
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Edizione |
[1st ed. 2022.] |
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Descrizione fisica |
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1 online resource (325 pages) |
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Disciplina |
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Soggetti |
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Solid state physics |
Semiconductors |
Electronics |
Photonics |
Optical engineering |
Optoelectronic devices |
Electronic Devices |
Electronics and Microelectronics, Instrumentation |
Photonics and Optical Engineering |
Optoelectronic Devices |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Chapter 1. Principles of Quantum Mechanics -- Chapter 2. Crystal Structure of Solids -- Chapter 3. Equilibrium Statistical Mechanics -- Chapter 4. Band Theory of Solids -- Chapter 5. Semiconductors in Equilibrium -- Chapter 6. Carrier concentration and electric potential -- Chapter 7. Generation-Recombination Processes -- Chapter 8. Carrier Transport -- Chapter 9. Metal-Semiconductor Contact -- Chapter 10. Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) -- Chapter 11. PN Junction Diode -- Chapter 12. Optoelectronic Devices. |
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Sommario/riassunto |
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This classroom-tested textbook provides a self-contained one- |
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semester course in semiconductor physics and devices that is ideal preparation for students to enter burgeoning quantum industries. Unlike other textbooks on semiconductor device physics, it provides a brief but comprehensive introduction to quantum physics and statistical physics, with derivations and explanations of the key facts that are suitable for second-year undergraduates, rather than simply postulating the main results. The book is structured into three parts, each of which can be covered in around ten lectures. The first part covers fundamental background material such as quantum and statistical physics, and elements of crystallography and band theory of solids. Since this provides a vital foundation for the rest of the text, concepts are explained and derived in more detail than in comparable texts. For example, the concepts of measurement and collapse of the wave function, which are typically omitted, are presented in this text in language accessible to second-year students. The second part covers semiconductors in and out of equilibrium, and gives details which are not commonly presented, such as a derivation of the density of states using dimensional analysis, and calculation of the concentration of ionized impurities from the grand canonical distribution. Special attention is paid to the solution of Poisson’s equation, a topic that is feared by many undergraduates but is brought back down to earth by techniques and analogies from first-year physics. Finally, in the third part, the material in parts 2 and 3 is applied to describe simple semiconductor devices, including the MOSFET, the Schottky and PN-junction diodes, and optoelectronic devices. With a wide range of exercises, this textbook is readily adoptable for an undergraduate course on semiconductor physics devices, and with its emphasis on consolidating and applying knowledge of fundamental physics, it will leave students in engineering and the physical sciences well prepared for a future where quantum industries proliferate. |
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