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1. |
Record Nr. |
UNISA996466672303316 |
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Autore |
Pilyugin Sergei Yu (Sergei Yurievitch), <1947-> |
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Titolo |
The space of dynamical systems with the C0-topology / / Sergei Yu. Pilyugin |
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Pubbl/distr/stampa |
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Berlin ; ; Heidelberg : , : Springer-Verlag, , [1994] |
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©1994 |
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ISBN |
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Edizione |
[1st ed. 1994.] |
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Descrizione fisica |
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1 online resource (CCIV, 194 p.) |
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Collana |
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Lecture Notes in Mathematics ; ; Volume 1571 |
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Disciplina |
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Soggetti |
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Differentiable dynamical systems |
Lyapunov functions |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Bibliographic Level Mode of Issuance: Monograph |
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Nota di contenuto |
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Definitions and preliminary results -- Generic properties of dynamical systems -- Topological stability -- Perturbations of atrractors -- Limit sets of domains. |
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Sommario/riassunto |
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This book is an introduction to main methods and principal results in the theory of Co(remark: o is upper index!!)-small perturbations of dynamical systems. It is the first comprehensive treatment of this topic. In particular, Co(upper index!)-generic properties of dynamical systems, topological stability, perturbations of attractors, limit sets of domains are discussed. The book contains some new results (Lipschitz shadowing of pseudotrajectories in structurally stable diffeomorphisms for instance). The aim of the author was to simplify and to "visualize" some basic proofs, so the main part of the book is accessible to graduate students in pure and applied mathematics. The book will also be a basic reference for researchers in various fields of dynamical systems and their applications, especially for those who study attractors or pseudotrajectories generated by numerical methods. |
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2. |
Record Nr. |
UNISA996535970803316 |
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Titolo |
Antichnyĭ mir i arkheologii͡a |
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Pubbl/distr/stampa |
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Saratov : , : Izd-vo Saratovskogo universiteta |
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Descrizione fisica |
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1 online resource : illustrations |
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Soggetti |
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Classical antiquities |
Archaeology |
Antiquités gréco-romaines |
Archéologie |
classical archaeology |
archaeology |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Periodico |
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Sommario/riassunto |
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"Mezhvuzovskiĭ sbornik nauchnykh trudov." |
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3. |
Record Nr. |
UNINA9910557351703321 |
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Autore |
Medjdoub Farid |
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Titolo |
Wide Bandgap Based Devices : Design, Fabrication and Applications |
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Pubbl/distr/stampa |
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Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021 |
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Descrizione fisica |
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1 online resource (242 p.) |
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Soggetti |
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Technology: general issues |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Sommario/riassunto |
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Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as "ultra-wide bandgap" materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and |
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Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits. |
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