III-Nitride LEDs : from UV to green / / Shengjun Zhou and Sheng Liu

• Record Nr.: UNISA996475870103316
• Autore: Zhou Shengjun <1958->
• Pubbl/distr/stampa: Gateway East, Singapore : , : Springer, , [2022]; ©2022
• ISBN: 981-19-0436-7
• Descrizione fisica: 1 online resource (244 pages)
• Collana: Advances in Optics and Optoelectronics.
• Disciplina: 621.381522
• Soggetti: Nitrides; Light emitting diodes
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Intro -- Preface -- Contents -- 1 Physics of III-Nitride Light-Emitting Diodes -- 1.1 History of III-Nitride LEDs -- 1.2 Mechanisms of III-Nitride LEDs -- 1.3 Radiative Recombination and Non-radiative Recombination -- 1.4 Internal Quantum Efficiency -- 1.5 Light Extraction Efficiency and External Quantum Efficiency -- References -- 2 Epitaxial Growth of III-Nitride LEDs -- 2.1 III-Nitride Blue LEDs -- 2.2 III-Nitride Green LEDs -- 2.2.1 InGaN/GaN Superlattice -- 2.2.2 Stacked GaN/AlN Last Quantum Barrier -- 2.3 III-Nitride Ultraviolet LEDs -- 2.3.1 Sputtered AlN Nucleation Layer -- 2.3.2 Effect of PSS on UV LED -- 2.3.3 Patterned Sapphire with Silica Array -- 2.3.4 Isoelectronic Doping -- 2.3.5 InAlGaN/AlGaN Electron Blocking Layer -- 2.3.6 Graded Al-Content AlGaN Insertion Layer -- References -- 3 High-Efficiency Top-Emitting III-Nitride LEDs -- 3.1 Light Extraction Microstructure -- 3.1.1 PSS and Patterned ITO -- 3.1.2 Double Layer ITO -- 3.1.3 3D Patterned ITO and Wavy Sidewalls -- 3.1.4 Roughened Sidewalls -- 3.1.5 Air Voids Structure -- 3.2 Current Blocking Layer -- 3.2.1 SiO2 Current Blocking Layer -- 3.2.2 Patterned Current Blocking Layer -- 3.2.3 Reflective Current Blocking Layer -- 3.3 Back Reflector -- 3.4 Low Optical Loss Electrode Structure -- 3.5 Ni/Au Wire Grid Transparent Conductive Electrodes -- References -- 4 Flip-Chip III-Nitride LEDs -- 4.1 Via-Hole-Based Two-Level Metallization Electrodes -- 4.2 Dielectric DBR -- 4.3 Comparison of Flip-Chip LEDs and Top-; Emitting LEDs -- 4.4 Ag/TiW, Ni/Ag and ITO/DBR Ohmic Contacts -- 4.5 High-Power Flip-Chip LEDs -- 4.6 Double-Layer Electrode and Hybrid Reflector -- 4.7 Mini/Micro-LED -- 4.7.1 Prism-Structured Sidewall of Mini-LED -- 4.7.2 Light Extraction Analysis of Micro-LED -- References -- 5 High Voltage and Vertical LEDs -- 5.1 Direct Current High Voltage LED.; 5.2 Alternating Current High Voltage LED -- 5.3 Comparison of DC-HV LED and AC-HV LED -- 5.4 Vertical LEDs -- References -- 6 Device Reliability and Measurement -- 6.1 Influence of Dislocation Density on Device Reliability -- 6.2 Forward Leakage Current -- 6.3 Reverse Leakage Current -- 6.4 Pad Luster Consistency -- 6.5 Transient Measurement of LED Characteristic Parameters -- References.
• Sommario/riassunto: This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the authors team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.