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Record Nr. |
UNISA996397690503316 |
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Autore |
Martin John <1619-1693.> |
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Titolo |
Lex Pacifica, or, Gods own law of determining controversies [[electronic resource] ] : explain'd and asserted in a sermon preached at Dorchester at the Assizes holden there for the county of Dorset, August 5, 1664 / / by John Martin . |
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Pubbl/distr/stampa |
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London, : Printed by J.G. for Richard Royston and are to be sold by John Courtney ..., 1664 |
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Descrizione fisica |
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Soggetti |
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Church and state - Church of England |
Sermons, English - 17th century |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Imprimatur Tho. Grigg... |
Reproduction of original in the Union Theological Seminary Library, New York. |
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Sommario/riassunto |
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2. |
Record Nr. |
UNINA9910698701403321 |
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Autore |
Wei Su-Huai |
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Titolo |
Design of Shallow p-type Dopants in ZnO (Presentation) [[electronic resource] /] / Su-Huai Wei, J. Li, and Y. Yan |
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Pubbl/distr/stampa |
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[Place of publication not identified], : Washington, D.C., : United States. Dept. of Energy, : Oak Ridge, Tenn., : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008 |
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Descrizione fisica |
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1 online resource (32 pages) : color illustrations |
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Collana |
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Altri autori (Persone) |
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Soggetti |
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Semiconductor doping |
Doped semiconductors |
Crystals - Defects |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Published through the Information Bridge: DOE Scientific and Technical Information. |
"May 2008." |
Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California. |
National Renewable Energy Laboratory (NREL), Golden, CO. |
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Sommario/riassunto |
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ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO. |
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