Migrant Conversions : Transforming Connections between Peru and South Korea / / Erica Vogel

• Record Nr.: UNISA996347747403316
• Autore: Vogel Erica
• Pubbl/distr/stampa: Berkeley, CA : , : University of California Press, , [2020]; ©2020
• ISBN: 0-520-97457-3
• Descrizione fisica: 1 online resource (188 p.)
• Collana: Global Korea ; ; 3
• Disciplina: 305.868/8505195
• Soggetti: Foreign workers, Peruvian - Korea (South) - Social conditions
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di contenuto: Frontmatter -- Contents -- List of Illustrations -- Acknowledgments -- Introduction: Constructing “The End” -- 1. Peru, South Korea, Peru . . . -- 2. Monetary Conversion -- 3. Religious Conversion -- 4. Cosmopolitan Conversion -- Epilogue -- Notes -- Bibliography -- Index
• Sommario/riassunto: A free open access ebook is available upon publication. Learn more at www.luminosoa.org. Peruvian migrant workers began arriving in South Korea in large numbers in the mid 1990s, eventually becoming one of the largest groups of non-Asians in the country. Migrant Conversions shows how despite facing unstable income and legal exclusion, migrants come to see Korea as an ideal destination. Some even see it as part of their divine destiny. Faced with looming departures, Peruvians develop cosmopolitan plans to transform themselves from economic migrants into pastors, lovers, and leaders. Set against the backdrop of 2008's global financial crisis, Vogel explores the intersections of three types of conversions- money, religious beliefs and cosmopolitan plans-to argue that conversions are how migrants negotiate the meaning of their lives in a constantly changing transnational context. At the convergence of cosmopolitan projects spearheaded by the state, churches, and other migrants, Peruvians change the value and meaning of their migrations. Yet, in attempting to make themselves at home in the world and give their families more opportunities, they also create potential losses. As Peruvians help carve out social spaces, they create ; complex and uneven connections between Peru and Korea that challenge a global hierarchy of nations and migrants. Exploring how migrants, churches and nations change through processes of conversion reveals how globalization continues to impact people's lives and ideas about their futures and pasts long after they have stopped moving, or that particular global moment has come to an end.

Physics of Quantum Electron Devices [[electronic resource] /] / edited by Federico Capasso

• Record Nr.: UNINA9910792491303321
• Pubbl/distr/stampa: Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 1990
• ISBN: 3-642-74751-5
• Edizione: [1st ed. 1990.]
• Descrizione fisica: 1 online resource (XVI, 403 p.)
• Collana: Springer Series in Electronics and Photonics, , 0172-5734 ; ; 28
• Disciplina: 620.11295; 620.11297
• Soggetti: Optical materials; Electronic materials; Electronics; Microelectronics; Optical and Electronic Materials; Electronics and Microelectronics, Instrumentation
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Bibliographic Level Mode of Issuance: Monograph
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: 1. Introduction -- 1.1 A Perspective on the Evolution of Quantum Semiconductor Devices -- 1.2 Outline of the Book -- References -- 2. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures -- 2.1 Dimensional Confinement and Device Concepts -- 2.2 Molecular Beam Epitaxy -- 2.3 The Surface Kinetic Processes and Computer Simulations of Growth -- 2.4 Quantum Wells: Growth and Photoluminescence -- 2.5 Concluding Remarks -- 2.6 Recent Advances -- References -- 3. Nanolithography for Ultra-Small Structure ; Fabrication -- 3.1 Overview -- 3.2 Resolution Limits of Lithographic Processes -- 3.3 Pattern Transfer -- References -- 4. Theory of Resonant Tunnelling and Surface Superlattices -- 4.1 Tunnelling Probabilities -- 4.2 Tunnelling Time -- 4.3 Pseudo-Device Calculations -- 4.4 Lateral Superlattices -- References -- 5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields -- 5.1 Background -- 5.2 LO Phonon Structure in the I(V) and C(V) Curves of Reverse-Biased Heterostructures -- 5.3 Magnetotunnelling from the 2D Electron Gas in Accumulated (InGa)As/InP Structures Grown by MBE and MOCVD -- 5.4 Observation of Magnetoquantized Interface States by Electron Tunnelling in Single-Barrier n? (InGa)As/InP/n+ (InGa)As Heterostructures -- 5.5 Box Quantised States -- 5.6 Double Barrier Resonant Tunnelling Devices -- References -- 6. Microwave and Millimeter-Wave Resonant-Tunnelling Devices -- 6.1 Speed of Response -- 6.2 Resonant-Tunnelling Oscillators -- 6.3 Self-Oscillating Mixers -- 6.4 Resistive Multipliers -- 6.5 Variable Absolute Negative Conductance -- 6.6 Persistent Photoconductivity and a Resonant-Tunnelling Transistor -- 6.7 A Look at Resonant-Tunnelling Theory -- 6.8 Concluding Remarks -- Note Added in Proof -- List of Symbols -- References -- 7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits -- 7.1 Resonant Tunnelling Through Double Barriers and Superlattices -- 7.2 Application of Resonant Tunnelling: Transistors and Circuits -- References -- 8. Resonant-Tunnelling Hot Electron Transistors (RHET) -- 8.1 RHET Operation -- 8.2 RHET Technology Using GaAs/AlGaAs Heterostructures -- 8.3 InGaAs-Based Material Evaluation -- 8.4 RHET Technology Using InGaAs-Based Materials -- 8.5 Theoretical Analyses of RHET Performance -- 8.6 Summary -- References -- 9. Ballistic Electron Transport in Hot Electron Transistors -- 9.1 Ballistic Transport -- 9.2 Hot Electron Transistors -- 9.3 Hot Electron Injectors -- 9.4 Energy Spectroscopy -- 9.5 Electron Coherent Effects in the THETA Device -- 9.6 Transfer to the L Satellite Valleys -- 9.7 The THETA as a Practical Device -- References -- 10. Quantum Interference Devices -- 10.1 Background -- 10.2 Two-Port Quantum Devices -- 10.3 Multiport Quantum Devices -- Appendix: Aharonov — Bohm Phase-shift in an Electric or Magnetic Field -- References -- Additional References -- 11. Carrier Confinement to One and Zero Degrees of Freedom -- 11.1 Experimental Methods -- 11.2 Discussion of Experimental Results -- 11.3 Conclusions -- References -- 12. Quantum Effects in Quasi-One-Dimensional MOSFETs -- 12.1 Background -- 12.2 MOSFET Length Scales -- 12.3 Special MOSFET Geometries -- 12.4 Strictly 1D Transport -- 12.5 Multichannel Transport (Particle in a Box?) -- 12.6 Averaged Quantum Diffusion -- 12.7 Mesoscopic Quantum Diffusion (Universal Conductance Fluctuations) -- 12.8 Effect of One Scatterer -- 12.9 Conclusion -- References.
• Sommario/riassunto: The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.