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1. |
Record Nr. |
UNISOBSOB017791 |
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Autore |
Pontano, Giovanni_Gioviano |
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Titolo |
De sermone libri sex / Ioannis Iovani Pontani ; Ediderunt S. Lupi ; et A. Risicato |
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Pubbl/distr/stampa |
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Lucani, : in aedibus Thesauri Mundi, ( (stampa 1954) |
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Descrizione fisica |
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Collana |
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Bibliotheca scriptorum latinorum mediaem et recentioris aetatis |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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2. |
Record Nr. |
UNINA9910454090603321 |
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Titolo |
Advanced semiconductor heterostructures [[electronic resource] ] : novel devices, potential device applications and basic properties / / editors, Mitra Dutta, Michael A. Stroscio |
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Pubbl/distr/stampa |
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Singapore ; ; River Edge, N.J., : World Scientific, c2003 |
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ISBN |
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1-281-92823-2 |
9786611928230 |
981-277-554-4 |
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Descrizione fisica |
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1 online resource (244 p.) |
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Collana |
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Selected topics in electronics and systems ; ; v. 28 |
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Altri autori (Persone) |
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DuttaMitra |
StroscioMichael A. <1949-> |
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Disciplina |
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Soggetti |
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Heterostructures |
Semiconductors - Materials |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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CONTENTS; PREFACE; ELECTRON-PHONON INTERACTIONS IN |
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INTERSUBBAND LASER HETEROSTRUCTURES; 1. Introduction; 2. Dielectric Continuum Model for Polar Excitations in Layered Heterostructures; 2.1. LO-phonon confinement in layered heterostructures; 2.2. Examples of scattering rate tailoring; 3. Multiband Description of Electron Confinement; 3.1. Analytical representation for the eigenstates; 3.2. Phenomenological boundary conditions; 3.3. Electron energy spectrum of basic heterostructures; 4. Subband Depopulation in Type-II Laser Heterostructures |
4.1. Interband tunneling in InAs/GaSb ""leaky"" heterostructure4.2. Phonon enhancement of the depopulation process; 5. Conclusions; Acknowledgments; References; QUANTUM DOT INFRARED DETECTORS AND SOURCES; 1. Introduction; 2. Historical Background; 3. Self-Organized Quantum Dots for Devices; 4. Electronic Spectra and Carrier Dynamics in Self-Organized Quantum Dots; 5. Quantum Dot Infrared Detectors and Focal Plane Arrays; 6. Quantum Dot Infrared Sources; 7. Future Prospects; Acknowledgments; References; Generation of Terahertz Emission Based on Intersubband Transitions; 1. Introduction |
2. Electrically pumped intersubband THz emitters2.1 THz emitters using electron-LO-phonon scattering for depopulation; 2.2. Role of interface and confined phonon modes; 2.3. Intrawell THz emitters using resonant tunneling for depopulation; 2.4 Transport issues of electrically pumped THz intersubband emitters; 3. Optically pumped intersubband THz emitters; 3.1 Intersubband pumped THz optical parametric oscillators (OPOs); 3.2 Intersubband optically pumped THz lasers; 3.3 Interband optically pumped THz emitters; Acknowledgments; References |
MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES1. Introduction; 2. Progress in the Design of Type-I GaSb-based Diode Lasers; 3. High-power Room-temperature CW Diode Lasers Operating in the Wavelength Range of 2.3 - 2.6-μm; 4. Conclusion; Acknowledgement; References; ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY; 1. Introduction; 2. Recent Developments in the Application of Quantum Dots to Biology; 3. Recent Developments in GaAs-Based Quantum Dots; 4. Recent Developments in InAs-Based Quantum Dots |
5. Recent Developments in GaSb-, GaN-, PbS-, CdTe-, InP-, and PbSe-Based Quantum Dots6. Recent Developments in CdSe-Based Quantum Dots; 7. Implementing Quantum Dot Technology in Biological Applications; Acknowledgments; References; HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES; 1. Introduction; 2. The Basic Equations; 2.1. The Boltzmann equation; 2.2. New variables; 2.3. Boundary conditions; 3. Solutions of the Kinetic Equation; 3.1. General structure of solutions; 3.2. Relationships between f+, f- and F+, F-; 3.3. The zero energy stair s = 0 |
3.4- The first stair s = 1 |
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Sommario/riassunto |
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This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the p |
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3. |
Record Nr. |
UNISA996212083703316 |
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Titolo |
L'espresso |
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Pubbl/distr/stampa |
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Roma : , : Editrice L'Espresso |
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Descrizione fisica |
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Disciplina |
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Soggetti |
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Popular culture - Italy |
Hebdomadaires |
Popular culture |
Italian language edition |
Periodicals. |
Italy Periodicals |
Italie |
Italy |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Periodico |
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Sommario/riassunto |
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"Politica, cultura, economia." |
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