1.

Record Nr.

UNINA9910450680703321

Autore

Galup-Montoro Carlos

Titolo

MOSFET modeling for circuit analysis and design [[electronic resource] /] / Carlos Galup-Montoro, Márcio Cherem Schneider

Pubbl/distr/stampa

Singapore ; ; Hackensack, NJ, : World Scientific, c2007

ISBN

1-281-12087-1

9786611120870

981-270-759-X

Descrizione fisica

1 online resource (445 p.)

Collana

International series on advances in solid state electronics and technology

Altri autori (Persone)

SchneiderMárcio Cherem

Disciplina

621.3815284

Soggetti

Metal oxide semiconductor field-effect transistors - Mathematical models

Field-effect transistors - Mathematical models

Electronic books.

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references and index.

Nota di contenuto

Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension

Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index

Sommario/riassunto

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory



required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex

2.

Record Nr.

UNISA990000912380203316

Autore

PERLINGIERI, Pietro

Titolo

Commento alla Costituzione italiana / Pietro Perlingieri ; con la collaborazione di S. Balletti ... [et al.]

Pubbl/distr/stampa

Napoli [etc.], : Edizioni scientifiche italiane, [1997]

ISBN

88-8114-433-6

Descrizione fisica

X, 973 p. ; 24 cm

Disciplina

342.45023

Soggetti

Italia Costituzioni politiche 1948

Collocazione

XXIV.2.B 62b (IG IV 1180)

IG IV 1180 (non disponibile)

Lingua di pubblicazione

Italiano

Formato

Materiale a stampa

Livello bibliografico

Monografia